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參數資料
| 型號： | 2SK2225 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 3/9頁 |
| 文件大小： | 57K |
| 代理商： | 2SK2225 |
2SK2225
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to source breakdown
voltage
V
(BR)DSS
1500
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
—
—
±
1
500
μ
A
μ
A
V
V
GS
=
±
20 V, V
DS
= 0
V
DS
=1200 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 1 A
V
GS
= 15 V*
I
D
= 1 A
V
DS
= 20 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
V
GS(off)
R
DS(on)
2.0
—
4.0
Static drain to source on state
resistance
—
9
12
1
Forward transfer admittance
|y
fs
|
0.45
0.75
—
S
1
Input capacitance
Ciss
—
990
—
pF
Output capacitance
Coss
—
125
—
pF
Reverse transfer capacitance
Crss
—
60
—
pF
Turn-on delay time
t
d(on)
—
17
—
ns
I
D
= 1 A
V
GS
= 10 V
R
L
= 30
Rise time
t
r
t
d(off)
t
f
V
DF
—
50
—
ns
Turn-off delay time
—
150
—
ns
Fall time
—
50
—
ns
Body to drain diode forward
voltage
—
0.9
—
V
I
F
= 2 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
1750
—
ns
I
= 20 A, V
= 0,
diF / dt = 100 A /
μ
s
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2225-03-E | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2225-80-E#T2 | 制造商:Renesas Electronics Corporation 功能描述:1500V POWERMOSFET |
| 2SK2225E | 制造商:Renesas Electronics 功能描述:Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 1.5KV 2A 3-Pin(3+Tab) TO-3PFM Box |
| 2SK2225-E | 制造商:Renesas Electronics Corporation 功能描述:2SK2225-E - Rail/Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1.5KV 2A 3-Pin(3+Tab) TO-3PFM Box Tube 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 1.5KV 2A 3-Pin(3+Tab) TO-3PFM Box Tray 制造商:Renesas Electronics Corporation 功能描述:MOSFET N-CH 1500V 2A TO-3P |
| 2SK2225E-80 | 制造商:Renesas Electronics Corporation 功能描述: |
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