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參數(shù)資料
| 型號： | 2SK2394 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | N-Channel Junction Silicon FET for Low-Noise HF Amplifier Applications(低噪聲 HF放大器應用的N溝道結型場效應管) |
| 中文描述： | N溝道結硅場效應管，高頻低噪聲放大器的應用（低噪聲高頻放大器應用的?溝道結型場效應管） |
| 文件頁數(shù)： | 3/3頁 |
| 文件大小： | 111K |
| 代理商： | 2SK2394 |
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of February, 1999. Specifications and information herein are subject
to change without notice.
2SK2394
PS No.4839–3/3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2395 | N-Channel Junction Silicon FET for Low-Noise HF Amplifier Applications(低噪聲 HF放大器應用的N溝道結型場效應管) |
| 2SK2418 | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2418L | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2418S | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 2SK2419 | MOSFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2394_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:N-Channel Junction Silicon FET Low-Noise HF Amplifi er Applications |
| 2SK2394-6-TB-E | 功能描述:JFET N-CH 15V 50MA CP RoHS:是 類別:分離式半導體產品 >> JFET（結點場效應 系列:- 標準包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應商設備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK2394-7-TB-E | 功能描述:JFET NCH J-FET RoHS:否 制造商:ON Semiconductor 晶體管極性:N-Channel 漏極電流（Vgs=0 時的 Idss）:50 mA 漏源電壓 VDS:15 V 閘/源擊穿電壓: 漏極連續(xù)電流:50 mA 配置: 安裝風格: 封裝 / 箱體:SC-59 封裝:Reel |
| 2SK2395 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:Low-Noise HF Amp Applications |
| 2SK2395F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 15V V(BR)DSS | 50MA I(D) | SPAK |
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