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參數(shù)資料
| 型號： | 2SK2552B |
| 廠商： | NEC Corp. |
| 英文描述： | N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTOR FOR IMPEDANCE CONVERTER OF ECM |
| 中文描述： | N溝道硅片結(jié)型場效應(yīng)晶體管的阻抗流腦轉(zhuǎn)爐 |
| 文件頁數(shù)： | 3/5頁 |
| 文件大小： | 124K |
| 代理商： | 2SK2552B |
Data Sheet D17282EJ1V0DS
3
2SK2552B
TYPICAL CHARACTERISTICS (T
A
= 25°C)
DERATING FACTOR OF POWER DISSIPATION
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
d
0
20
40
60
80
100
120
0
25
50
75
100
125
150
175
T
A
- Ambient Temperature - °C
I
D
μ
A
0
200
400
600
800
1000
0
2
4
6
8
10
0 V
0.2 V
0.3 V
0.1 V
V
GS
= 0.2 V
0.1 V
V
DS
- Drain to Source Voltage - V
GATE TO SOURCE CURRENT vs.
GATE TO SOURCE VOLTAGE
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
I
G
μ
A
0
10
20
30
40
10
20
30
40
0.2
0.4 0.6
0.8
0.2
0.4
0.6
0.8
V
GS
- Gate to Source Voltage - V
I
D
μ
A
0
200
400
600
800
1000
1200
1400
1600
-0.8 -0.6 -0.4 -0.2
0
0.2
0.4
0.6
0.8
1
V
DS
= 2.0 V
V
GS
- Gate to Source Voltage - V
INPUT CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER ADMITTANCE AND GATE
CUT-OFF VOLTAGE vs. ZERO GATE VOLTAGE
DRAIN CURRENT
C
i
1
10
1
10
100
V
GS
= 0 V
f = 1.0 MHz
V
DS
- Drain to Source Voltage - V
|
f
V
G
0.1
1
10
10
100
1000
| y
fs
|
V
GS(off)
V
DS
= 2.0 V
I
DSS
- Zero Gate Voltage Drain Current -
μ
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2552C | JUNCTION FIELD EFFECT TRANSISTOR |
| 2SK2553L | Silicon N Channel MOS FET(N溝道MOSFET) |
| 2SK2553S | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553 | Silicon N Channel MOS FET High Speed Power Switching |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2552B(T1-A) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK2552C | 制造商:NEC 制造商全稱:NEC 功能描述:JUNCTION FIELD EFFECT TRANSISTOR |
| 2SK2553 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2553(L) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 50A I(D) | TO-262VAR |
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