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參數資料
| 型號： | 2SK2582 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N-Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅N溝道場效應晶體管（不適用溝道MOSFET的） |
| 文件頁數： | 3/5頁 |
| 文件大?。?/td> | 28K |
| 代理商： | 2SK2582 |
2SK2582
3
Electrical Characteristics
(Ta = 25
q
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
350
—
—
V
I
D
= 10 mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
r
30
—
—
V
I
G
=
r
100
P
A, V
DS
= 0
Gate to source leak current
I
GSS
—
—
r
10
P
A
V
GS
=
r
25 V, V
DS
= 0
V
DS
=350 V, V
GS
= 0
I
D
= 1 mA, V
DS
= 10 V
I
D
= 7 A
V
GS
= 10 V*
I
D
= 7 A
V
DS
= 10 V*
V
DS
= 10 V
V
= 0
f = 1 MHz
Zero gate voltage drain current I
DSS
Gate to source cutoff voltage
—
—
250
P
A
V
GS(off)
R
DS(on)
2.0
—
3.0
V
Static drain to source on state
resistance
—
0.30
0.40
:
1
Forward transfer admittance
|y
fs
|
5.0
9.0
—
S
1
Input capacitance
Ciss
—
1250
—
pF
Output capacitance
Coss
—
420
—
pF
Reverse transfer capacitance
Crss
—
70
—
pF
Turn-on delay time
t
d(on)
—
15
—
ns
I
D
= 7 A
V
GS
= 10 V
R
L
= 3.75
:
Rise time
t
r
t
d(off)
t
f
V
DF
—
70
—
ns
Turn-off delay time
—
100
—
ns
Fall time
—
52
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 13 A, V
GS
= 0
Body to drain diode reverse
recovery time
Note
1. Pulse Test
t
rr
—
350
—
ns
I
= 13 A, V
= 0,
diF / dt = 100 A /
P
s
See characteristics curves of 2SK1401
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2586 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET |
| 2SK2586(E) | 制造商:Renesas Electronics 功能描述:Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine |
| 2SK2586-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(3+Tab) TO-3P Magazine Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,60A,7ohm,TO-3P |
| 2SK2588 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK258H | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 8A I(D) | TO-3 |
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