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參數資料
| 型號： | 2SK2631 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | Ultrahigh-Speed Switching Applications |
| 中文描述： | 超高速開關應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 30K |
| 代理商： | 2SK2631 |
2SK2631
No.6600-1/5
Features
Low ON resistance.
Smaller amount of total gate charge.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6600
2SK2631
Package Dimensions
unit : mm
2083B
unit : mm
2092B
[2SK2631]
63000 TS IM TA-3024
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP
4
5.0
0.85
0.7
0.6
1
5
7
0
1
7
0.5
1.2
2.3
0.5
1
2
3
2.3
2.3
Ultrahigh-Speed Switching Applications
[2SK2631]
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : TP-FA
6.5
5.0
4
2.3
0.5
1
5
0
7
1
2
0.85
0.5
1.2
0 to 0.2
2.3
2.3
0.6
1
2
3
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| 2SK2735L | Silicon N Channel MOS FET High Speed Power Switching |
| 2SK2735S | Silicon N Channel MOS FET High Speed Power Switching |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2631-TL-E | 制造商:SANYO 功能描述:Nch 800V 1A 10@10V TP-FA Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 800V 1A TO251 制造商:Sanyo 功能描述:0 |
| 2SK2632LS | 功能描述:MOSFET N-CH 800V 2.5A TO-220FI RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2638-01MRSC | 制造商:Fuji Electric 功能描述: |
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| 2SK2640-01MRSC | 制造商:Fuji Electric 功能描述: |
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