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參數資料
| 型號： | 2SK2684L |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel DV-L MOS FET(N溝道 DV-L MOSFET) |
| 中文描述： | 硅?頻道的DV -蜇場效應晶體管（不適用溝道的DV -蜇MOSFET）的 |
| 文件頁數： | 3/10頁 |
| 文件大小： | 68K |
| 代理商： | 2SK2684L |
2SK2684(L), 2SK2684(S)
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
30
—
—
V
I
D
= 10mA, V
GS
= 0
Gate to source breakdown
voltage
V
(BR)GSS
±
20
—
—
V
I
G
=
±
100
μ
A, V
DS
= 0
Zero gate voltage drain
current
I
DSS
—
—
10
μ
A
V
DS
= 30 V, V
GS
= 0
Gate to source leak current
I
GSS
V
GS(off)
—
—
±
10
μ
A
V
GS
=
±
16V, V
DS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V*
1
I
D
= 15A, V
GS
= 4V*
1
I
D
= 15A, V
DS
= 10V*
1
V
DS
= 10V
V
GS
= 0
f = 1MHz
Gate to source cutoff voltage
1.0
—
2.0
V
Static drain to source on state R
DS(on)
resistance
—
20
28
m
m
R
DS(on)
|y
fs
|
Ciss
—
35
50
Forward transfer admittance
12
18
—
S
Input capacitance
—
750
—
pF
Output capacitance
Coss
—
520
—
pF
Reverse transfer capacitance Crss
—
210
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
—
16
—
ns
V
GS
= 10V, I
D
= 15A
R
L
= 0.67
Rise time
—
260
—
ns
Turn-off delay time
—
85
—
ns
Fall time
—
90
—
ns
Body to drain diode forward
voltage
—
1.0
—
V
I
F
= 30A, V
GS
= 0
Body to drain diode reverse
recovery time
Note:
1. Pulse test
t
rr
—
45
—
ns
I
= 30A, V
= 0
diF/ dt = 50A/
μ
s
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| 2SK2687-01 | 制造商:Fuji Electric 功能描述:MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 7.5 Milliohms;ID +/-50A;TO-220;PD 60W;VGS +/ |
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