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參數(shù)資料
| 型號(hào)： | 2SK2934 |
| 廠商： | Hitachi,Ltd. |
| 英文描述： | Silicon N Channel MOS FET(N溝道MOSFET) |
| 中文描述： | 硅?通道場(chǎng)效應(yīng)晶體管（不適用溝道MOSFET的） |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大小： | 66K |
| 代理商： | 2SK2934 |
2SK2934
3
Electrical Characteristics
(Ta = 25
°
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
Gate to source breakdown voltage V
(BR)GSS
Gate to source leak current
60
—
—
V
I
D
= 10mA, V
GS
= 0
I
G
=
±
100
μ
A, V
DS
= 0
V
GS
=
±
16V, V
DS
= 0
V
DS
= 60 V, V
GS
= 0
I
D
= 1mA, V
DS
= 10V
I
D
= 15A, V
GS
= 10V
Note4
I
D
= 15A, V
GS
= 4V
Note4
I
D
= 15A, V
DS
= 10V
Note4
V
DS
= 10V
V
GS
= 0
f = 1MHz
±
20
—
—
V
I
GSS
I
DSS
V
GS(off)
R
DS(on)
R
DS(on)
|y
fs
|
Ciss
—
—
±
10
μ
A
μ
A
Zero gate voltage drain current
—
—
10
Gate to source cutoff voltage
1.5
—
2.5
V
Static drain to source on state
—
0.026
0.034
resistance
—
0.045
0.07
Forward transfer admittance
11
17
—
S
Input capacitance
—
740
—
pF
Output capacitance
Coss
—
380
—
pF
Reverse transfer capacitance
Crss
—
140
—
pF
Turn-on delay time
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
—
10
—
ns
I
D
= 15A, V
GS
= 10V
R
L
= 2
Rise time
—
160
—
ns
Turn-off delay time
—
100
—
ns
Fall time
—
150
—
ns
Body–drain diode forward voltage
—
0.95
—
V
I
F
= 25A, V
GS
= 0
I
= 25A, V
= 0
diF/ dt =50A/
μ
s
Body–drain diode reverse
recovery time
Note:
4. Pulse test
—
40
—
ns
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2934(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2935(E) | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK2936-E | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 45A 3-Pin(3+Tab) TO-220CFM Tube |
| 2SK2937-E | 制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box Tray 制造商:Renesas Electronics Corporation 功能描述:Nch MOSFET,60V,25A,26m ohm,TO220FM 制造商:Renesas 功能描述:Trans MOSFET N-CH 60V 25A 3-Pin(3+Tab) TO-220FM Box |
| 2SK2937-E-Q | 制造商:Renesas Electronics Corporation 功能描述:POWER MOSFETS FOR GENERAL SWITCHING |
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