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參數資料
| 型號： | 2SK3113B-ZK-E1-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 195K |
| 代理商： | 2SK3113B-ZK-E1-AY |
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confirm that this is the latest version.
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sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3113B
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D18061EJ3V0DS00 (3rd edition)
Date Published June 2007 NS
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2006
DESCRIPTION
The 2SK3113B is N-channel MOS FET device that features a low gate charge and excellent switching
characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
FEATURES
Low on-state resistance
R
DS(on)
= 4.4
Ω
MAX. (V
GS
= 10
V, I
D
= 1.0
A)
Low gate charge
Q
G
= 7.9 nC TYP. (V
DD
= 450 V, V
GS
= 10 V, I
D
= 2.0 A)
Gate voltage rating :
±
30 V
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
PACKING
PACKAGE
2SK3113B-S15-AY
Note
Tube 70 p/tube
TO-251 (MP-3-a) typ. 0.39 g
2SK3113B(1)-S27-AY
Note
Tube 75 p/tube
TO-251 (MP-3-b) typ. 0.34 g
2SK3113B-ZK-E1-AY
Note
2SK3113B-ZK-E2-AY
Note
Pure Sn (Tin)
Tape 2500 p/reel
TO-252 (MP-3ZK) typ. 0.27 g
Note
Pb-free (This product does not contain Pb in external electrode.)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC) (T
C
= 25°C)
I
D(DC)
±
2.0
A
Drain Current (pulse)
Note1
I
D(pulse)
±
8.0
A
Total Power Dissipation (T
C
= 25°C)
P
T1
20
W
Total Power Dissipation (T
A
= 25°C)
Note2
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
–55 to +150
°C
I
AS
2.0
A
E
AS
2.7
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 40 mm × 40 mm × 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
Ω
,
V
GS
= 20
→
0 V
(TO-251)
(TO-252)
<R>
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3114 | SWITCHING N-CHANNEL POWER MOSFET INDUSTRIAL USE |
| 2SK3115 | Switching N-channel power MOS FET industrial use |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3113B-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 2A 4400m@10V TO252 Bulk |
| 2SK3114 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3114-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 4A 2200m@10V IsolatedTO220 Bulk |
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