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參數資料
| 型號： | 2SK3116 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關N溝道功率場效應晶體管 |
| 文件頁數： | 1/8頁 |
| 文件大小： | 70K |
| 代理商： | 2SK3116 |
1998
MOS FIELD EFFECT TRANSISTOR
2SK3116
SWITCHING
N-CHANNEL POWER MOS FET
Document No. D13339EJ2V0DS00 (2nd edition)
Date Published May 2002 NS CP (K)
Printed in Japan
DATA SHEET
The mark
#
shows major revised points.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DESCRIPTION
The 2SK3116 is N-channel DMOS FET device that features a
low gate charge and excellent switching characteristics, and
designed for high voltage applications such as switching power
supply, AC adapter.
FEATURES
Low gate charge
Q
G
= 26 nC TYP. (I
D
= 7.5 A, V
DD
= 450 V, V
GS
= 10 V)
Gate voltage rating
±
30 V
Low on-state resistance
R
DS(on)
= 1.2
MAX. (V
GS
= 10 V, I
D
= 3.75 A)
Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°C
)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
600
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±
30
V
Drain Current (DC)
I
D(DC)
±
7.5
A
Drain Current (pulse)
Note1
I
D(pulse)
±
30
A
Total Power Dissipation (T
A
= 25°C)
P
T1
1.5
W
Total Power Dissipation (T
C
= 25°C)
P
T2
70
W
Channel Temperature
T
ch
150
°C
Storage Temperature
T
stg
55 to +150
°C
Single Avalanche Current
Note2
I
AS
7.5
A
Single Avalanche Energy
Note2
E
AS
37.5
mJ
Diode Recovery dv/dt
Note3
dv/dt
3.5
V/ns
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 150 V, R
G
= 25
, V
GS
= 20
→
0 V
3.
I
F
≤
3.0 A, V
clamp
= 600 V, di/dt
≤
100 A/
μ
s, T
A
= 25°C
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3116
TO-220AB
2SK3116-S
TO-262
2SK3116-ZJ
TO-263
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3116-S | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-ZJ | SWITCHING N-CHANNEL POWER MOS FET |
| 2SK311 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK310 | SILICON N-CHANNEL MOS FET (HIGH SPEED POWER SWITCHING) |
| 2SK3150L | Silicon N Channel MOS FET(N溝道MOSFET) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3116-AZ | 制造商:Renesas Electronics 功能描述:Nch 600V 7.5A 1200m@10V TO220AB Bulk |
| 2SK3116B | 制造商:NEC 制造商全稱:NEC 功能描述:7.5A600V |
| 2SK3116-S | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
| 2SK3116-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 600V 7.5A 3-Pin(2+Tab) TO-263 |
| 2SK3116-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET |
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