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參數(shù)資料
| 型號： | 2SK3296-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 6/8頁 |
| 文件大?。?/td> | 422K |
| 代理商： | 2SK3296-ZK |
Data Sheet D14063EJ2V0DS
6
2SK3296
PACKAGE DRAWINGS (Unit : mm)
1)TO-220AB (MP-25)
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1 2 3
10.6 MAX.
10.0
3.6±0.2
φ
4
3
1.3±0.2
0.75±0.1
2.54 TYP.
2.54 TYP.
5
6
1
1
1.3±0.2
0.5±0.2
2.8±0.2
2)TO-262
4.8 MAX.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
1
2
3
(10)
4
1.3±0.2
0.75±0.3
2.54 TYP.
2.54 TYP.
8
1
1.3±0.2
0.5±0.2
2.8±0.2
1
3)TO-263 (MP-25ZK)
10.0±0.2
8
2.54
0.7±0.15
9
2
1
1
1
2
3
4
2
4.45±0.2
1.3±0.2
0.5±0.2
0 to 8
o
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.4
No plating
8.4 TYP.
0.025 to
0.25
0.25
4)TO-263 (MP-25ZJ)
(10)
1.4±0.2
1
2.54 TYP.
2.54 TYP.
8
1
2
3
5
4
2
4.8 MAX.
1.3±0.2
0.5±0.2
(05R
(08R
1.Gate
2.Drain
3.Source
4.Fin (Drain)
0.7±0.2
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Protection
Diode
Gate
Drain
Remark
The diode connected between the gate and source of the transistor
serves as a protector against ESD.
When this device actually used, an additional protection circuit is
externally required if a voltage exceeding the rated voltage may be
applied to this device.
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