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參數(shù)資料
| 型號(hào)： | 2SK3367-Z |
| 廠商： | NEC Corp. |
| 英文描述： | RECTIFIER STANDARD SINGLE 1A 100V 100 30A-ifsm 5uA-ir 1V-vf DO-41 5K/AMMO |
| 中文描述： | 開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管工業(yè)用 |
| 文件頁(yè)數(shù)： | 5/8頁(yè) |
| 文件大小： | 83K |
| 代理商： | 2SK3367-Z |
Data Sheet D14257EJ1V0DS00
5
2SK3367
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
R
D
0
50
20
10
2
4
6
8
12
14
16
18
0
50
100
150
I
D
= 10 A
10 V
4.5 V
V
GS
= 4.0 V
1.0
1.2
I
S
0
1.6
1.4
V
SD
- Source to Drain Voltage - V
0.2
0.4
0.6
0.8
Pulsed
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
0.01
0.1
1
10
100
V
GS
= 10 V
4.5 V
0 V
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
C
i
,
o
,
r
0.1
100
1000
10000
1
10
100
V
= 0 V
f = 1 MHz
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
I
D
- Drain Current - A
t
d
,
r
,
d
,
f
1
0.01
0.1
10
100
10000
1000
1
10
100
V
DD
= 15 V
V
GS
= 10 V
R
G
= 10
t
r
t
f
t
d(off)
t
d(on)
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
I
F
- Diode Current - A
t
r
di/dt = 100 A/
μ
s
V
GS
= 0 V
1
0.1
10
1
10
100
1000
100
V
G
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
40
Q
G
- Gate Charge - nC
V
D
0
40
80
10
20
30
2
4
6
8
0
V
DD
= 24 V
15 V
6 V
V
DS
12
14
10
I
D
= 36 A
V
GS
20
60
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| 2SK3367-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 |
| 2SK3367-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 30V 36A 9m@10V TO252 Cut Tape 制造商:Renesas 功能描述:Trans MOSFET N-CH 30V 36A 3-Pin(2+Tab) TO-252 T/R |
| 2SK3371 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator Applications |
| 2SK3371(Q) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 1A 3-Pin(2+Tab) PW-Mold Bulk |
| 2SK3371(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 1A PW-MOLD |
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