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參數資料
| 型號： | 2SK3434-Z |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | Switching N-channel power MOS FET industrial use |
| 中文描述： | N溝道 開關功率場效應晶體管 工業級 |
| 文件頁數： | 2/4頁 |
| 文件大小： | 48K |
| 代理商： | 2SK3434-Z |
Preliminary Data Sheet D14603EJ1V0DS00
2
2SK3434
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Drain to Source On-state Resistance
R
DS(on)1
V
GS
= 10
V, I
D
= 24 A
16
20
m
R
DS(on)2
V
GS
= 4.0
V, I
D
= 24
A
22
31
m
Gate to Source Cut-off Voltage
V
GS(off)
V
DS
= 10
V, I
D
= 1
mA
1.5
2.0
2.5
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10
V, I
D
= 24
A
13
27
S
Drain Leakage Current
I
DSS
V
DS
= 60
V, V
GS
= 0
V
10
μ
A
Gate to Source Leakage Current
I
GSS
V
GS
= ±20
V, V
DS
= 0
V
±
10
μ
A
Input Capacitance
C
iss
V
DS
= 10
V, V
GS
= 0
V, f = 1
MHz
2100
pF
Output Capacitance
C
oss
340
pF
Reverse Transfer Capacitance
C
rss
170
pF
Turn-on Delay Time
t
d(on)
I
D
= 24
A, V
GS(on)
= 10
V, V
DD
= 30
V,
40
ns
Rise Time
t
r
R
G
= 10
400
ns
Turn-off Delay Time
t
d(off)
120
ns
Fall Time
t
f
160
ns
Total Gate Charge
Q
G
I
D
= 48
A , V
DD
= 48
V, V
GS
= 10
V
40
nC
Gate to Source Charge
Q
GS
7
nC
Gate to Drain Charge
Q
GD
11
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 48
A, V
GS
= 0
V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 48
A, V
GS
= 0
V,
43
ns
Reverse Recovery Charge
Q
rr
di/dt = 100
A/
μ
s
61
nC
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0
V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
TEST CIRCUIT 1 AVALANCHE CAPABILITY
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1 %
τ
V
GS
Wave Form
D
Wave Form
V
GS
I
D
10
%
0
0
90
%
90
%
90
%
V
GS(on)
I
D
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10
%
10
%
#
#
#
#
#
#
#
#
#
#
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PDF描述 |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3434-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3434-Z-E1-AZ | 制造商:Renesas Electronics 功能描述:Nch 60V 48A 20m@10V TO220SMD Cut Tape |
| 2SK3434-ZJ | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 48A I(D) | TO-263AB |
| 2SK3435 | 制造商:KEXIN 制造商全稱:Guangdong Kexin Industrial Co.,Ltd 功能描述:MOS Field Effect Transistor |
| 2SK3435-AZ | 制造商:Renesas Electronics Corporation 功能描述:Transistor,MOSFET |
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