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參數(shù)資料
| 型號(hào)： | 2SK351 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管| MOSFET的| N溝道| 800V的五（巴西）直| 5A條（?。﹟至3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 113K |
| 代理商： | 2SK351 |
1
TO-220F
Item
Drain-source voltage
Continuous drain current
Pulsed drain current
Gate-source voltage
Repetitive or non-repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode Recovery dV/dt
Max. power dissipation
Symbol
V
DS
I
D
I
D(puls]
V
GS
I
AR *2
E
AS *1
dV
DS
/dt
*4
dV/dt
*3
P
D
Ta=25°C
Tc=25°C
T
ch
T
stg
*3 I
F
=
D
, -di/dt=50A/μs, Vcc=
DSS
, Tch=
Ratings
Unit
V
A
A
V
A
mJ
kV/μs
kV/μs
W
600
±10
±40
±30
10
217
20
5
2.16
50
+150
-55 to +150
Operating and storage
temperature range
*1 L=3.99mH, Vcc=60V *2 Tch=
*4 VDS<
Electrical characteristics (T
c
=25°C unless otherwise specified)
Thermalcharacteristics
2SK3502-01MR
Super FAP-G Series
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum ratings and characteristic
Absolute maximum ratings
(Tc=25°C unless otherwise specified)
Item
Symbol Test Conditions
R
th(ch-c)
channel to case
R
th(ch-a)
channel to ambient
Zero gate voltage drain current I
DSS
V
DS
=600V V
GS
=0V
DS
=480V V
GS
=0V
V
GS
I
D
=5A V
GS
=10V
I
D
=5A V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=300V I
D
=5A
V
GS
=10V
R
GS
=10
Min. Typ. Max. Units
600
3.0
V
V
μA
nA
S
pF
nC
A
V
μs
μC
ns
Min. Typ. Max. Units
Thermal resistance
2.5
58.0
°C/W
°C/W
Symbol
V
(BR)DSS
V
GS(th)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
td
(on)
t
r
td
(off)
t
f
Q
G
Q
GS
Q
GD
I
AV
V
SD
t
rr
Q
rr
Item
Drain-source breakdown voltaget
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transcondutance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time t
on
Turn-off time t
off
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Test Conditions
I
D
=1mA V
GS
=0V
I
D
= 250μA V
DS
=V
GS
T
ch
=25°C
V
ch
=125°C
=±30V
DS
=0V
V
CC
=250V
I
D
=10A
V
GS
=10V
L=3.99mH T
ch
=25°C
I
F
=10A V
GS
=0V T
ch
=25°C
I
F
=10A V
GS
=0V
-di/dt=100A/μs T
ch
=25°C
°C
°C
5.0
25
250
100
0.75
10
0.58
8
4
1200
140
1800
210
6
9
17
15
35
26
23
53
11
45
16.5
15
7
30
11
10
10
1.00
0.75
5.0
1.50
Outline Drawings
Equivalent circuit schematic
Gate(G)
Source(S)
Drain(D)
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