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參數(shù)資料
| 型號(hào)： | 2SK3813 |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOSFET |
| 中文描述： | 開(kāi)關(guān)N溝道功率MOSFET |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 159K |
| 代理商： | 2SK3813 |
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MOS FIELD EFFECT TRANSISTOR
2SK3813
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D16739EJ2V0DS00 (2nd edition)
Date Published September 2004 NS CP(K)
Printed in Japan
2004
The mark
shows major revised points.
DESCRIPTION
The 2SK3813 is N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Super low on-state resistance
R
DS(on)1
= 5.3 m
MAX. (V
GS
= 10
V, I
D
= 30
A)
R
DS(on)2
= 7.1 m
MAX. (V
GS
= 4.5
V, I
D
= 30
A)
Low C
iss
: C
iss
= 5500 pF TYP.
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
40
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±20
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±60
A
I
D(pulse)
±240
A
Total Power Dissipation (T
C
= 25°C)
P
T1
84
W
Total Power Dissipation (T
A
= 25°C)
P
T2
1.0
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
Repetitive Avalanche Energy
Note3
T
stg
55 to +150
°C
E
AS
137
mJ
I
AR
37
A
E
AR
137
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Starting T
ch
= 25°C, V
DD
= 20 V, R
G
= 25
, V
GS
= 20
→
0 V, L = 100
μ
H
3.
T
ch(peak)
≤
150°C, R
G
= 25
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3813
TO-251 (MP-3)
2SK3813-Z
TO-252 (MP-3Z)
(TO-251)
(TO-252)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3815 | General-Purpose Switching Device Applications |
| 2SK3821 | General-Purpose Switching Device Applications |
| 2SK382 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK384L | TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 300MA I(D) | TO-252VAR |
| 2SK384S | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3813-AZ | 功能描述:MOSFET N-CH 40V MP-3/TO-251 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3813-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 40V 60A 3-Pin(2+Tab) TO-252 Cut Tape |
| 2SK3814-AZ | 功能描述:MOSFET N-CH 60V MP-3/TO-251 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3814-Z-AZ | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 60V 60A 3-Pin(2+Tab) TO-252 Bulk |
| 2SK3814-Z-E1-AZ | 制造商:Renesas Electronics Corporation 功能描述: |
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