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參數資料
| 型號： | 61LV5128 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數： | 1/9頁 |
| 文件大小： | 73K |
| 代理商： | 61LV5128 |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. B
07/16/01
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2000, Integrated Silicon Solution, Inc.
IS61LV5128
ISSI
512K x 8 HIGH-SPEED CMOS STATIC RAM
JULY 2001
FEATURES
High-speed access times:
10, 12 and 15 ns
High-performance, low-power CMOS process
Multiple center power and ground pins for
greater noise immunity
Easy memory expansion with
CE
and
OE
options
CE
power-down
Fully static operation: no clock or refresh
required
TTL compatible inputs and outputs
Single 3.3V power supply
Packages available:
– 36-pin 400-mil SOJ
– 36-pin miniBGA
– 44-pin TSOP (Type II)
DESCRIPTION
The
ISSI
IS61LV5128 is a very high-speed, low power,
524,288-word by 8-bit CMOS static RAM. The IS61LV5128
is fabricated using
ISSI
's high-performance CMOS tech-
nology. This highly reliable process coupled with innova-
tive circuit design techniques, yields higher performance
and low power consumption devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250 μW (typical) with CMOS input levels.
The IS61LV5128 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
The IS61LV5128 is available in 36-pin 400-mil SOJ, 36-
pin mini BGA, and 44-pin TSOP (Type II) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A18
CE
OE
WE
512K X 8
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
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