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參數(shù)資料
| 型號(hào)： | 70511 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 75-V (D-S) 200∑C MOSFET |
| 中文描述： | N通道75 - V（下局副局長(zhǎng)）200ΣCMOSFET的 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大小： | 177K |
| 代理商： | 70511 |
SPICE Device Model SUM110N08-05
Vishay Siliconix
www.vishay.com
2
Document Number: 70511
09-Jun-04
SPECIFICATIONS (T
J
= 25
°
C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Simulated
Data
Measured
Data
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
3.1
V
On-State Drain Current
a
I
D(on)
V
DS
>
5 V, V
GS
= 10 V
1197
A
V
GS
= 10 V, I
D
= 30 A
0.0038
0.0038
V
GS
= 10 V, I
D
= 30 A, T
J
= 125°C
0.0063
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 200°C
0.0084
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
109
S
Forward Voltage
a
Dynamic
b
V
SD
I
S
= 110 A, V
GS
= 0 V
0.92
1
V
Input Capacitance
C
iss
7663
7900
Output Capacitance
C
oss
936
950
Reverse Transfer Capacitance
C
rss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
406
550
Pf
Total Gate Charge
c
Q
g
139
145
Gate-Source Charge
c
Q
gs
36
30
Gate-Drain Charge
c
Q
gd
V
DS
= 35 V, V
GS
= 10 V, I
D
= 110 A
45
45
NC
Turn-On Delay Time
c
t
d(on)
88
25
Rise Time
c
t
r
110
200
Turn-Off Delay Time
c
t
d(off)
130
65
Fall Time
c
t
f
V
DD
= 35 V, R
L
= 0.40
I
D
110 A, V
GEN
= 10 V, R
G
= 2.5
149
165
Reverse Recovery Time
t
rr
I
F
= 85 A, di/dt = 100 A/
μ
s
55
80
Ns
Notes:
a.
b.
c.
Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%.
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
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