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參數(shù)資料
| 型號： | FLC317MG-4 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | High Voltage - High Power GaAs FET |
| 中文描述： | 高電壓-高功率GaAs場效應(yīng)管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 481K |
| 代理商： | FLC317MG-4 |
ABSOLUTE MAXIMUM RATING (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
PTot
T
stg
T
ch
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
DC Input Voltage
VDS
Forward Gate Current
IGF
Reverse Gate Current
IGR
Operating channel temperature Tch
Condition
Unit
V
mA
mA
o
C
RG=100
W
RG=100
W
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
-
-
-1.0
-5.0
33.5
8.5
-
-
Typ. Max.
1200
600
-2.0
-
34.8
9.5
37.0
8.0
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Power-added Efficiency
Thermal Resistance
IDSS
gm
Vp
VGSO
P1dB
G1dB
h
add
Rth
VDS=5V,VGS=0V
VDS=5V,IDS=800mA
VDS=5V,IDS=60mA
1800
-
-3.5
-
-
-
-
10.0
mA
mS
V
V
dBm
dB
%
o
C/W
IGS=-60uA
Channel to Case
Limit
10
<19.4
Item
Symbol
Condition
Limit
>-2.0
145
V
DS
=10V
f=4.2GHz
IDS(DC)=0.6IDSS(Typ)
Unit
Rating
15
-5
15
-65 to +175
175
High Voltage - High Power GaAs FET
FEATURES
High Output Power: P1dB=34.8dBm(Typ.)
High Gain: G1dB=9.5dB(Typ.)
High PAE:
η
add=37%(Typ.)
Proven Reliability
Hermetic Metal/Ceramic Package
DESCRIPTION
The FLC317MG-4 is a power GaAs FET that is designed for
general purpose application in the C-Band frequency range as it
provides superior power,gain,and efficiency.
CASE STYLE: MG
Edition 1.1
May 2005
1
FLC317MG-4
Class
III
2000 V~
Note : Based on EIAJ ED-4701 C-111A(C=100pF, R=1.5k
)
EUD stringent Quality Assurance Program assures the highest
reliability and consistent performance.
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