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參數資料
| 型號： | FLL2400IU-2C |
| 廠商： | FUJITSU LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | L-Band High Power GaAs FET |
| 中文描述： | L BAND, GaAs, N-CHANNEL, RF POWER, JFET |
| 封裝： | CASE IU, 6 PIN |
| 文件頁數： | 3/4頁 |
| 文件大小： | 105K |
| 代理商： | FLL2400IU-2C |
3
FLL2400IU-2C
L-Band High Power GaAs FET
S-PARAMETERS
VDS= 12V, IDS= 3000mA
S21
MAG
ANG
FREQUENCY
(MHZ)
S11
S12
S22
MAG
ANG
MAG
ANG
MAG
ANG
1000
1100
1200
1300
1400
1500
1600
1700
1800
1900
2000
2100
2200
2300
2400
2500
2600
2700
2800
2900
3000
.96
.95
.94
.92
.89
.83
.75
.59
.29
.33
.65
.74
.73
.66
.51
.26
.25
.56
.74
.83
.87
163.50
160.98
157.92
154.29
149.86
144.48
137.49
128.15
123.34
-154.32
-168.04
176.86
165.20
154.02
142.48
141.92
-137.12
-139.05
-152.03
-162.29
-170.06
.38
.44
.54
.69
.91
1.23
1.73
2.49
3.58
4.07
3.38
2.71
2.39
2.34
2.47
2.61
2.53
2.09
1.62
1.23
.91
27.91
17.85
6.09
-7.95
-24.30
-44.26
-68.31
-98.08
-138.58
169.42
124.54
93.33
68.23
44.10
17.00
-13.63
-53.34
-92.50
-126.64
-157.48
174.26
.01
.01
.01
.01
.01
.01
.02
.02
.03
.04
.04
.03
.03
.03
.04
.04
.04
.04
.03
.02
.02
15.94
10.08
2.90
-8.76
-26.71
-48.79
-78.69
-115.43
-166.25
135.08
83.42
47.28
19.42
-7.18
-36.14
-66.67
-106.75
-145.50
-178.55
153.66
125.90
.93
.92
.90
.87
.83
.79
.76
.73
.59
.26
.29
.45
.53
.57
.60
.62
.66
.63
.55
.49
.55
162.90
160.44
157.61
154.92
152.29
149.47
145.40
137.71
122.69
120.03
-178.92
-177.80
176.00
170.13
165.05
157.84
143.72
120.08
86.52
39.21
-12.13
Note: This S-Parameter data shows measurements performed on a single-ended push-pull FET. These parameters should be used
to determine the calculated Push-Pull S-Parameter amplifier designs.
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FLL300IL-1 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
| FLL300IL-2 | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:L-Band Medium & High Power GaAs FET |
| FLL300IL-3 | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:L-Band Power GaAs FET(44.5dBm@2.6GHz), Bulk |
| FLL300IP-4 | 制造商:FUJITSU 功能描述: |
| FLL310IQ-3A | 制造商:FUJITSU 功能描述: |
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