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參數資料
| 型號： | FLM3439-8F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 274K |
| 代理商： | FLM3439-8F |
1
Edition 1.1
August 2004
DESCRIPTION
The FLM3439-8F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
FEATURES
High Output Power: P1dB= 39.5dBm (Typ.)
High Gain: G1dB= 11.0dB (Typ.)
High PAE:
η
add= 37% (Typ.)
Low IM3= -46dBc@Po = 28.5dBm
Broad Band: 3.4 ~ 3.9GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
FLM3439-8F
C-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
42.8
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 32.0 and -4.4 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
-
-
3900
2000
-2.0
5850
-
-3.5
-1.0
-5.0
-
-
10.0
11.0
-
-
40
-
38.5
39.5
-
VDS = 5V, IDS = 180mA
IGS = -180
μ
A
VDS = 5V, IDS = 2200mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 3.4 ~ 3.9 GHz,
ZS=ZL= 50 ohm
f = 3.9 GHz,
f = 10 MHz
2-Tone Test
Pout = 28.5dBm S.C.L.
mA
mS
V
dB
%
-44
-46
-
dBc
dBm
V
G1dB
Idsr
η
add
Drain Current
-
2200
2600
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Channel to Case
Thermal Resistance
-
3.0
3.5
°
C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IB
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
Tch
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