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參數資料
| 型號： | FLM5359-45F |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | C-BAND INTERNALLY MATCHED FET |
| 中文描述： | C波段內部匹配場效應管 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 208K |
| 代理商： | FLM5359-45F |
C-Band Internally Matched FET
FEATURES
High Output Power: P1dB=46.5dBm(Typ.)
High Gain: G1dB=8.5dB(Typ.)
High PAE:
η
add=36%(Typ.)
Broad Band: 5.3~5.9GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
Edition 1.2
September 2004
1
FLM5359-45F
DESCRIPTION
The FLM5359-45F is a power GaAs FET that is internally matched
for standard communication bands to provide optimum power and
gain in a 50
system.
ABSOLUTE MAXIMUM RATINGS (Case Temperature Tc=25
o
C)
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
DS
V
GS
P
T
T
stg
T
ch
Unit
V
V
W
o
C
o
C
RECOMMENDED OPERATING CONDITION (Case Temperature Tc=25
o
C)
Item
Symbol
DC Input Voltage
V
DS
Forward Gate Current
I
GF
Reverse Gate Current
I
GR
Unit
V
mA
mA
ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25
o
C)
Min.
-
-
-1.0
-5.0
46.0
7.5
-
-
-
-
-
Typ.
16.0
8000
-2.0
-
46.5
8.5
8.5
36
-
0.8
-
G.C.P.: Gain Compression Point
Max.
-
-
-3.5
-
-
-
10.0
-
1.4
1.0
100
Drain Current
Transconductance
Pinch-off Voltage
Gate-Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Drain Current
Power-added Efficiency
Gain Flatness
Thermal Resistance
Channel Temperature Rise
I
DSS
g
m
V
p
V
GSO
P
1dB
G
1dB
I
dsr
N
add
G
R
th
T
ch
A
mS
V
V
dBm
dB
A
%
dB
o
C/W
o
C
Channel to Case
12V x I
DS
(DC) X R
th
CASE STYLE : IK
ESD
Note : Based on EIAJ ED-4701 C-111A (C=100pF, R=1.5k
)
Class III
2000V
~
Condition
Limit
≤
12
≤
107.2
≥
-23.2
-65 to +175
175
115.4
Rating
15
-5
R
G
=13 ohm
R
G
=13 ohm
Item
Symbol
Condition
Limit
I
GS
=-960uA
V
DS
=12V
I
DS
(DC)=8.0A
(typ.)
f= 5.3
~
5.9 GHz
Zs=Z
L
=50 ohm
Unit
V
DS
=5V, V
GS
=0V
V
DS
=5V, I
DS
=8.0A
V
DS
=5V, I
DS
=960mA
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