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參數(shù)資料
| 型號： | FM0580-M |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Chip Schottky Barrier Diodes - Chip Schottky Barrier Diodes |
| 中文描述： | 貼片肖特基二極管-肖特基二極管芯片 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 80K |
| 代理商： | FM0580-M |
0.1
1.0
.01
10
50
RATING AND CHARACTERISTIC CURVES (FM0520-M THRU FM05100-M)
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.4-TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE,(V)
JUNCTION CAPACITANCE,(pF)
INSTANTANEOUS FORWARD CURRENT,(A)
FORWARD VOLTAGE,(V)
Pulse Width 300us
1% Duty Cycle
0.1
0.2
0.3
0.4
0.5
0.6
350
300
250
200
150
100
50
0
.01 .05 .1 .5 1 5 10 50 100
.1 .3 .5 .7 .9 1.1 1.3 1.5
0.5
.1
1.0
10
100
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS
REVERSE LEAKAGE CURRENT, (mA)
0 20 40 60 80 100 120 140
.01
Tj=75 C
FM0520-M~FM0540-M
FM0550-M~FM05100-M
FM0550-M~FM0560-M
FM0520-M~FM0540-M
Tj=25 C
Tj=25 C
AMBIENT TEMPERATURE,( C)
0
0
20
40
60
80
100
120
140
160
180
200
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
0
6
3
9
15
12
NUMBER OF CYCLES AT 60Hz
1
10
5
50
100
Tj=25 C
8.3ms Single Half
Sine Wave
JEDEC method
PEAK FORWARD SURGE CURRENT,(A)
FM0580-M~FM05100-M
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM0520-N | CABLE ASSEM 2MM 34POS M-M 12,1 |
| FM0530-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM0540-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM0550-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM0560-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
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