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參數(shù)資料
| 型號(hào)： | FM1100-M |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | Silicon epitaxial planer type |
| 中文描述： | 硅外延龍門(mén) |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 69K |
| 代理商： | FM1100-M |
FM120-M THRU FM1100-M
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizng Flame
Retardant EpoxyMolding Compound.
For surface mounted applications.
Exceeds environmental standards of MIL-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDEC SOD-123 / MINI SMA
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.04 gram
(V)
(V)
(V)
(V)
(
o
C)
FM120-M
12
20
14
20
FM130-M
13
30
21
30
FM140-M
14
40
28
40
FM150-M
15
50
35
50
FM160-M
16
60
42
60
FM180-M
18
80
56
80
FM1100-M
10
100
70
100
0.50
0.70
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
30
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
98
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
120
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
0.161(4.1)
0.146(3.7)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.110(2.8)
0.094(2.4)
0.063(1.6)
0.055(1.4)
0.035(0.9) Typ.
0.035(0.9) Typ.
Dimensions in inches and (millimeters)
SOD-123
Formosa MS
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| FM120-M | CABLE ASSEM 2MM 10POS SGL END 2,1 |
| FM140-M | Silicon epitaxial planer type |
| FM160-M | .050 X .050 MICRO STRIPS |
| FM150L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM160L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM1100-MH | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1100-M-R | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1100-N | 制造商:PACELEADER 制造商全稱(chēng):PACELEADER INDUSTRIAL 功能描述:CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER |
| FM1100-S | 制造商:FORMOSA 制造商全稱(chēng):Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM1100-W | 功能描述:肖特基二極管與整流器 1A 100V Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時(shí)間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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