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參數資料
| 型號： | FM120-MH |
| 廠商： | 美麗微半導體有限公司 |
| 英文描述： | CABLE ASSEM 2MM 10POS SGL END 6,1 |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 79K |
| 代理商： | FM120-MH |
FM120-M THRU FM1100-M
H
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECSOD-123H
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0393 gram
(V)
(V)
(V)
(V)
(
o
C)
FM120-MH
12
20
14
20
FM130-MH
13
30
21
30
FM140-MH
14
40
28
40
FM150-MH
15
50
35
50
FM160-MH
16
60
42
60
FM180-MH
18
80
56
80
FM1100-MH
10
100
70
100
0.50
0.70
0.85
-55 to +125
-55 to +150
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
1.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
25
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
98
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
120
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.055(1.4)
0.035(0.9)
0.028(0.7)
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
SOD-123H
相關PDF資料 |
PDF描述 |
|---|---|
| FM180-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM120-N | CABLE ASSEM 2MM 20POS F-F 2,1 |
| FM1100-N | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM180-S | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM120-S | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM120-M-R | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM120-N | 制造商:PACELEADER 制造商全稱:PACELEADER INDUSTRIAL 功能描述:CHIIIP SCHOTTKY BARRIIIER RECTIIIFIIIER |
| FM120-S | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM120W | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| FM120-W | 功能描述:肖特基二極管與整流器 1A 20V Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 產品:Schottky Diodes 峰值反向電壓:2 V 正向連續電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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