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參數(shù)資料
| 型號(hào)： | FM1808-120-P |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁數(shù)： | 8/12頁 |
| 文件大小： | 89K |
| 代理商： | FM1808-120-P |
Ramtron
FM1808-70
27 July 2000
8/12
Read Cycle
AC Parameters
TA = -40
°
C to + 85
°
C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
tCE
Chip Enable Access Time (to data valid)
tCA
Chip Enable Active Time
tRC
Read Cycle Time
tPC
Precharge Time
tAS
Address Setup Time
tAH
Address Hold Time
tOE
Output Enable Access Time
tHZ
Chip Enable to Output High-Z
tOHZ
Output Enable to Output High-Z
Write Cycle
AC Parameters
TA = -40
°
C to + 85
°
C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
tCA
Chip Enable Active Time
tCW
Chip Enable to Write High
tWC
Write Cycle Time
tPC
Precharge Time
tAS
Address Setup Time
tAH
Address Hold Time
tWP
Write Enable Pulse Width
tDS
Data Setup
tDH
Data Hold
tWZ
Write Enable Low to Output High Z
tWX
Write Enable High to Output Driven
tHZ
Chip Enable to Output High-Z
tWS
Write Setup
tWH
Write Hold
Notes
1
This parameter is periodically sampled and not 100% tested.
2
The relationship between /CE and /WE determines if a /CE- or /WE-controlled write occurs. There is no timing
specification associated with this relationship.
Power Cycle Timing
TA = -40
°
C to + 85
°
C, VDD = 4.5V to 5.5V unless otherwise specified
Symbol
Parameter
Min
tPU
VDD Min to First Access Start
1
tPD
Last Access Complete to VDD Min
0
Capacitance
TA = 25
°
C , f=1.0 MHz, VDD = 5V
Symbol
Parameter
Max
CI/O
Input Output Capacitance
8
CIN
Input Capacitance
6
-70
-120
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
Min
70
130
60
5
10
Max
70
10,000
10
15
15
Min
120
180
60
5
10
Max
120
10,000
10
15
15
-70
-120
Units
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Notes
1
1
1
2
2
Min
70
70
130
60
0
10
40
30
5
10
0
0
Max
10,000
15
15
Min
120
120
180
60
0
10
40
40
5
10
0
0
Max
10,000
15
15
Units
μ
S
μ
S
Notes
Units
pF
pF
Notes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM1808-70-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-S | 4Kb FRAM Serial 3V Memory |
| FM200TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-2A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-3A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM1808-120-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
| FM1808-70-S | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲(chǔ)容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
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