- 您現在的位置：買賣IC網 > PDF目錄375837 > FM1808 (Ramtron International Corp.) 256Kb Bytewide FRAM Memory(256Kb寬字節FRAM存儲器) PDF資料下載
參數資料
| 型號： | FM1808 |
| 廠商： | Ramtron International Corp. |
| 英文描述： | 256Kb Bytewide FRAM Memory(256Kb寬字節FRAM存儲器) |
| 中文描述： | FRAM存儲器的256Kb Bytewide（256Kb的寬字節的FRAM存儲器） |
| 文件頁數： | 1/12頁 |
| 文件大小： | 89K |
| 代理商： | FM1808 |
Preliminary
FM1808
256Kb Bytewide FRAM Memory
This data sheet contains design specifications for product development.
These specifications may change in any manner without notice.
27 July 2000
Ramtron International Corporation
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-FRAM, (719) 481-7000, Fax (719) 481-7058
www.ramtron.com
1/12
Features
256K bit Ferroelectric Nonvolatile RAM
Organized as 32,768 x 8 bits
High endurance 10 Billion (10
10
) read/writes
10 year data retention at 85
°
C
NoDelay write
Advanced high-reliability ferroelectric process
Superior to BBSRAM Modules
No battery concerns
Monolithic reliability
True surface mount solution, no rework steps
Superior for moisture, shock, and vibration
Resistant to negative voltage undershoots
SRAM & EEPROM Compatible
JEDEC 32Kx8 SRAM & EEPROM pinout
70 ns access time
130 ns cycle time
Equal access & cycle time for reads and writes
Low Power Operation
25 mA active current
20
μ
A standby current
Industry Standard Configuration
Industrial temperature -40
°
C to +85
°
C
28-pin SOP or DIP
Description
The FM1808 is a 256-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or FRAM is
nonvolatile but operates in other respects as a RAM.
It provides data retention for 10 years while
eliminating the reliability concerns, functional
disadvantages and system design complexities of
battery-backed SRAM. It’s fast write and high write
endurance makes it superior to other types of
nonvolatile memory.
In-system operation of the FM1808 is very similar to
other RAM based devices. Memory read- and write-
cycles require equal times. The FRAM memory,
however, is nonvolatile due to its unique ferroelectric
memory process. Unlike BBSRAM, the FM1808 is a
truly monolithic nonvolatile memory. It provides the
same functional benefits of a fast write without the
serious disadvantages associated with modules and
batteries or hybrid memory solutions.
These capabilities make the FM1808 ideal for
nonvolatile memory applications requiring frequent or
rapid writes in a bytewide environment. The
availability of a true surface-mount package improves
the manufacturability of new designs, while the DIP
package facilitates simple design retrofits. The
FM1808 offers guaranteed operation over an
industrial temperature range of -40°C to +85°C.
Pin Configuration
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
VSS
DQ3
DQ4
DQ5
DQ6
DQ7
CE
A10
OE
A11
A9
A8
A13
WE
VDD
Ordering Information
70 ns access, 28-pin plastic DIP
70 ns access, 28-pin SOP
120 ns access, 28-pin plastic DIP
120 ns access, 28-pin SOP
FM1808-70-P
FM1808-70-S
FM1808-120-P
FM1808-120-S
相關PDF資料 |
PDF描述 |
|---|---|
| FM1808 | 4Kb FRAM Serial 3V Memory |
| FM1808-120-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-S | 4Kb FRAM Serial 3V Memory |
| FM200TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM1808-120-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-120-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
發布緊急采購，3分鐘左右您將得到回復。