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參數(shù)資料
| 型號： | FM220-LN |
| 廠商： | 美麗微半導(dǎo)體有限公司 |
| 英文描述： | CONN HEADER .05 30POS DUAL SMD |
| 中文描述： | 肖特基二極管芯片-硅外延式龍門 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 72K |
| 代理商： | FM220-LN |
FM220-LN THRU FM2100-LN
Features
Plastic package has Underwriters Laboratory
Flammability Classification 94V-O Utilizing Flame
Retardant Epoxy Molding Compound.
For surface mounted applications.
Exceeds environmental standards of ML-S-19500 /
228
Low leakage current.
Mechanical data
Case : Molded plastic, JEDECDO-214AC
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity : Indicated by cathode band
Mounting Position : Any
Weight : 0.0017 ounce, 0.057 gram
(V)
(V)
(V)
(V)
(
o
C)
FM220-LN
SK22
20
14
20
FM230-LN
SK23
30
21
30
FM240-LN
SK24
40
28
40
FM250-LN
SK25
50
35
50
FM260-LN
SK26
60
42
60
FM280-LN
SK28
80
56
80
FM2100-LN
S210
100
70
100
0.70
-55 to +125
-55 to +150
0.85
0.50
SYMBOLS
MARKING
CODE
Operating
temperature
V
RRM
*1
V
RMS
*2
V
R
*3
V
F
*4
MAXIMUM RATINGS
(AT T
A
=25
o
C unless otherwise noted)
PARAMETER
CONDITIONS
Symbol
MIN.
TYP.
MAX.
UNIT
Forward rectified current
See Fig.1
I
O
2.0
A
Forward surge current
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
I
FSM
50
A
V
R
= V
RRM
T
A
= 25
o
C
0.5
mA
V
R
= V
RRM
T
A
= 125
o
C
10
mA
Thermal resistance
Junction to ambient
R
q
JA
75
o
C / w
Diode junction capacitance
f=1MHz and applied 4vDC reverse voltage
C
J
160
pF
Storage temperature
T
STG
-55
+150
o
C
Reverse current
I
R
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage
Chip Schottky Barrier Diodes
Silicon epitaxial planer type
Formosa MS
0.205(5.2)
0.189(4.8)
0.012(0.3) Typ.
0.110(2.8)
0.094(2.4)
0.181(4.6)
0.165(4.2)
0.075(1.9)
0.067(1.7)
0.040 (1.0) Typ.
0.040(1.0) Typ.
0.067(1.7)
0.053(1.3)
Dimensions in inches and (millimeters)
SMA-LN
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FM240-LN | CONN HEADER .05 60POS DUAL T/H |
| FM250-LN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM280-LN | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM230-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM260-L | Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FM220M | 制造商:RECTRON 制造商全稱:Rectron Semiconductor 功能描述:SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| FM220-M | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Silicon epitaxial planer type |
| FM220-MH | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM220-N | 制造商:FORMOSA 制造商全稱:Formosa MS 功能描述:Chip Schottky Barrier Diodes - Silicon epitaxial planer type |
| FM220-W | 功能描述:肖特基二極管與整流器 2A 20V Schottky RoHS:否 制造商:Skyworks Solutions, Inc. 產(chǎn)品:Schottky Diodes 峰值反向電壓:2 V 正向連續(xù)電流:50 mA 最大浪涌電流: 配置:Crossover Quad 恢復(fù)時間: 正向電壓下降:370 mV 最大反向漏泄電流: 最大功率耗散:75 mW 工作溫度范圍:- 65 C to + 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-143 封裝:Reel |
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