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參數資料
| 型號： | FM24C02ULEMT8 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | I2C Serial EEPROM |
| 中文描述： | 256 X 8 I2C/2-WIRE SERIAL EEPROM, PDSO8 |
| 封裝： | TSSOP-8 |
| 文件頁數： | 11/14頁 |
| 文件大小： | 105K |
| 代理商： | FM24C02ULEMT8 |
11
www.fairchildsemi.com
FM24C02U/03U Rev. A.3
F
Write Operations
BYTE WRITE
For a write operation, a second address field is required which is a
word address that is comprised of eight bits and provides access to
any one of the 256 bytes in the selected page of memory. Upon
receipt of the byte address, the FM24C02U/03U responds with an
acknowledge and waits for the next eight bits of data, again,
responding with an acknowledge. The master then terminates the
transfer by generating a stop condition at which time the FM24C02U/
03U begins the internal write cycle to the nonvolatile memory. While
the internal write cycle is in progress, the FM24C02U/03U inputs
are disabled, and the device will not respond to any requests from
the master for the duration of t
WR
. Refer to Figure 4 or the address,
acknowledge, and data transfer sequence.
PAGE WRITE
To minimize write cycle time, FM24C02U/03U offer Page Write
feature, by which, up to a maximum of 16 contiguous byte
locations can be programmed all at once (instead of 16 individual
byte writes). To facilitate this feature, the memory array is orga-
nized in terms of
“
Pages.
”
A Page consists of 16 contiguous byte
locations starting at every 16-Byte address boundary (for ex-
ample, starting at array address 0x00, 0x10, 0x20 etc.). Page
Write operation limits access to byte locations within a page. In
other words a single Page Write operation will not cross over to
locations on another page but will
“
roll over
”
to the beginning of the
page whenever end of Page is reached and additional locations
are continued to be accessed. A Page Write operation can be
initiated to begin at any location within a page (starting address of
the Page Write operation need not be the starting address of a
Page).
S
T
O
P
Bus Activity:
Master
SDA Line
Bus Activity:
EEPROM
DATA n + 15
DATA n + 1
DATA n
WORD ADDRESS (n)
A
C
K
S
T
A
R
T
SLAVE
ADDRESS
A
C
K
A
C
K
A
C
K
A
C
K
S
T
O
P
A
C
K
DATA
A
C
K
A
C
K
S
T
A
R
T
WORD
ADDRESS
SLAVE
ADDRESS
Bus Activity:
Master
SDA Line
Bus Activity:
EEPROM
Page Write is initiated in the same manner as the Byte Write
operation; but instead of terminating the cycle after transmitting
the first data byte, the master can further transmit up to 15 more
bytes. After the receipt of each byte, FM24C02U/03U will respond
with an acknowledge pulse, increment the internal address counter
to the next address, and is ready to accept the next data. If the
master should transmit more than sixteen bytes prior to generat-
ing the STOP condition, the address counter will
“
roll over
”
and
previously written data will be overwritten. As with the Byte Write
operation, all inputs are disabled until completion of the internal
write cycle. Refer to Figure 5for the address, acknowledge, and
data transfer sequence.
Acknowledge Polling
Once the stop condition is issued to indicate the end of the host
’
s
write operation, the FM24C02U/03U initiates the internal write
cycle. ACK polling can be initiated immediately. This involves
issuing the start condition followed by the slave address for a write
operation. If the FM24C02U/03U is still busy with the write
operation, no ACK will be returned. If the FM24C02U/03U has
completed the write operation, an ACK will be returned and the
host can then proceed with the next read or write operation.
Write Protection (FM24C03U Only)
Programming of the upper half (upper 1Kbit) of the memory will not
take place if the WP pin of the FM24C03U is connected to V
CC
.
The FM24C03U will respond to slave and byte addresses; but if
the memory accessed is write protected by the WP pin, the
FM24C03U will not generate an acknowledge after the first byte
of data has been received. Thus, the program cycle will not be
started when the stop condition is asserted.
Byte Write (Figure 4)
Page Write (Figure 5)
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| FM24C02ULEN | 功能描述:電可擦除可編程只讀存儲器 USE 698-CAT24WC02P RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM24C02ULM8 | 功能描述:電可擦除可編程只讀存儲器 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM24C02ULM8X | 功能描述:電可擦除可編程只讀存儲器 SOIC-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM24C02ULMT8 | 功能描述:電可擦除可編程只讀存儲器 TSSOP-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| FM24C02ULMT8X | 功能描述:電可擦除可編程只讀存儲器 TSSOP-8 RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數據保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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