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參數資料
| 型號： | IRF830 |
| 廠商： | Transys Electronics Ltd. |
| 英文描述： | N-CHANNEL ENHANCEMENT MODE |
| 中文描述： | N溝道增強模式 |
| 文件頁數： | 5/7頁 |
| 文件大小： | 58K |
| 代理商： | IRF830 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF830
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); parameter V
DS
Fig.14. Typical switching times t
d(on)
, t
r
, t
d(off)
, t
f
= f(R
G
)
Fig.15. Normalised drain-source breakdown voltage
V
(BR)DSS
/V
(BR)DSS 25 C
= f(T
j
)
Fig.16. Source-Drain diode characteristic.
I
F
= f(V
SDS
); parameter T
j
Fig.17. Maximum permissible non-repetitive
avalanche current (I
) versus avalanche time (t
p
);
unclamped inductive load
Fig.18. Maximum permissible repetitive avalanche
current (I
AR
) versus avalanche time (t
p
)
0
10
20
30
40
50
60
70
80
0
5
10
15
PHP4N50
Qg, Gate charge (nC)
VGS, Gate-Source voltage (Volts)
ID = 6 A
Tj = 25 C
250 V
VDD = 400 V
100 V
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
5
10
15
20
PHP4N50
VSDS, Source-Drain voltage (Volts)
IF, Source-Drain diode current (Amps)
VGS = 0 V
150 C
Tj = 25 C
0
10
20
30
40
50
60
1
10
100
1000
tr
PHP4N50
RG, Gate resistance (Ohms)
Switching times (ns)
VDD = 250 V
Tj = 25 C
RD = 39 Ohms
VGS = 10 V
td(on)
td(off)
tf
PHP6N50E
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Non-repetitive Avalanche current, IAS (A)
25 C
VDS
ID
tp
Tj prior to avalanche = 125 C
-100
-50
0
50
100
150
0.85
0.9
0.95
1
1.05
1.1
1.15
Tj, Junction temperature (C)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
V(BR)DSS @ 25 C
PHP6N50E
0.01
0.1
1
10
1E-06
1E-05
1E-04
1E-03
1E-02
Avalanche time, tp (s)
Maximum Repetitive Avalanche Current, IAR (A)
125 C
Tj prior to avalanche = 25 C
March 1999
5
Rev 1.000
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