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參數(shù)資料
| 型號： | IRF9130 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | P-CHANNEL POWER MOSFETS |
| 中文描述： | 的P -溝道功率MOSFET |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 20K |
| 代理商： | IRF9130 |
IRF9130SMD
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukPrelim. 09/00
V
GS
I
D
I
D
I
DM
P
D
Gate – Source Voltage
Continuous Drain Current @ T
case
= 25°C
Continuous Drain Current @ T
case
= 100°C
Pulsed Drain Current
Power Dissipation @ T
case
= 25°C
Linear Derating Factor
T
J
, T
stg
R
q
JC
Operating and Storage Temperature Range
Thermal Resistance Junction to Case
±20V
8A
5A
40A
45W
0.36W/°C
–55 to 150°C
2.8°C/W max.
MECHANICAL DATA
Dimensions in mm (inches)
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
SMD 1
P–CHANNEL
POWER MOSFET
FOR HI–REL
APPLICATIONS
FEATURES
HERMETICALLY SEALED
SIMPLE DRIVE REQUIREMENTS
LIGHTWEIGHT
SCREENING OPTIONS AVAILABLE
ALL LEADS ISOLATED FROM CASE
Pad 1 – Gate
Pad 2 – Drain
Pad 3 – Source
V
DSS
I
D(cont)
R
DS(on)
-100V
-8A
0.35
W
(also available as IRFN9130SMD with Gate and Source reversed)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IRF9130 | -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET |
| IRF9130 | TRANSISTORS P-CHANNEL(Vdss=-100V, Rds(on)=0.30ohm, Id=-11A) |
| IRF9130SMD | P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9130 | P-CHANNEL POWER MOSFET |
| IRF9140SM | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 14A I(D) | LLCC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IRF9130_03 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P–CHANNEL POWER MOSFET |
| IRF9130CECC | 制造商:International Rectifier 功能描述: |
| IRF9130CECCEB | 制造商:International Rectifier 功能描述: |
| IRF9130SMD | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:P-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS |
| IRF9130SMD05 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:P-Channel |
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