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參數(shù)資料
| 型號： | MB81ES653225-12L |
| 廠商： | Fujitsu Limited |
| 英文描述： | Consumer/Embedded Application Specific Memory for SiP |
| 中文描述： | 消費/嵌入式SIP應(yīng)用程序特定的內(nèi)存 |
| 文件頁數(shù)： | 1/44頁 |
| 文件大小： | 485K |
| 代理商： | MB81ES653225-12L |
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DS05-11411-2E
FUJITSU SEMICONDUCTOR
DATA SHEET
MEMORY
CMOS
2
×
×
32-BIT
SINGLE DATA RATE I/F FCRAM
TM
Consumer/Embedded Application Specific Memory for SiP
MB81ES653225-12/-12L
CMOS 2-Bank
×
1,048,576-Word
×
32-Bit
Fast Cycle Random Access Memory (FCRAM) with Single Data Rate for SiP
■
DESCRIPTION
The Fujitsu MB81ES653225 is a Single Data Rate Interface Fast Cycle Random Access Memory (FCRAM*)
containing 67,108,864 memory cells accessible in a 32-bit format. The MB81ES653225 features a fully synchro-
nous operation referenced to a positive edge clock whereby all operations are synchronized at a clock input which
enables high performance and simple user interface coexistence.
The MB81ES653225 is utilized using a Fujitsu advanced FCRAM core technology and designed for low power
consumption and low voltage operation than regular synchronous DRAM (SDRAM) .
The MB81ES653225 is dedicated for SiP (System in a package) , and ideally suited for various embedded/
consumer applications including digital AVs and image processing where a large band width and low power
consumption memory is needed.
* : FCRAM is a trademark of Fujitsu Limited, Japan.
■
PRODUCT LINE
Parameter
MB81ES653225
12
12L
Clock Frequency (Max)
CL
=
2
CL
=
3
CL
=
2
CL
=
3
CL
=
2
CL
=
3
54.0 MHz
85.0 MHz
Burst Mode Cycle Time (Min)
18.5 ns
11.7 ns
Access Time from Clock (Max)
12 ns
8.7 ns
Operating Current (Max) (32 page length)
35 mA
Power Down Mode Current (Max)
Self Refresh Current (Max) (Ta
=
+
85
°
C)
0.5 mA
1000
μ
A
0.1 mA
450
μ
A
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