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參數資料
| 型號： | Q62702-B62 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN SILICON EPIBASE TRANSISTORS |
| 中文描述： | NPN硅EPIBASE三極管 |
| 文件頁數： | 5/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-B62 |
BGC420
High Frequency Products
5
Edition A13, 05/99
Typical Application
Remarks:
1)
2)
3)
4)
To provide low frequency stability C2 should be 10 times C3.
Be aware that also coupling capacitors determine the switching times.
The collector current at Q1 can be estimated by Ic=0.6V / Rx[
W
].
Place C2 as close to the device as possible.
D1
D2
R1 (47k)
Q2
R2 (500R)
R3
10k
R4 (2k7)
Q1
Vc,8
Vb,3
GND,7,2
RFin,1
RFout,6
Vr,5
Vcc,4
on
off
C2, 1nF
L1,100nH
C3, 100pF
Rx
3
C4,150pF C5,100nF
Figure 1. Typical Application and Internal Circuit
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| Q62702-B664 | Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702-B70 | Silicon Tuning Varactor (Tuning varactor in passivated Mesa technology epitaxial design) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| Q62702-B628 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (Extented frequency range up to 2.5 GHz; special design for use in TV-SAT indoor units) |
| Q62702-B63 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN SILICON EPIBASE TRANSISTORS |
| Q62702-B631 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702B634 | 制造商:INFINEON 功能描述:DIODE |
| Q62702B-634 | 制造商:INFINEON 功能描述:DIODE |
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