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參數資料
| 型號： | Q62702-B63 |
| 廠商： | SIEMENS AG |
| 英文描述： | NPN SILICON EPIBASE TRANSISTORS |
| 中文描述： | NPN硅EPIBASE三極管 |
| 文件頁數： | 3/11頁 |
| 文件大小： | 101K |
| 代理商： | Q62702-B63 |
BGC420
High Frequency Products
3
Edition A13, 05/99
Power Gain
versus Frequency
Vcc=3V, Icc=5mA
Gma
Gms
￥
S21
￥
2
dB
f
GHz
Icc
mA
Gma
Gms
dB
Power Gain
versus Device Current
Vcc=3V
￥
S21
￥
2
S21
2
versus Frequency and Temperature
Vcc=3V, Icc=7mA
f
GHz
dB
=
-40°C
= +27
°C
= +85
°C
28
26
24
22
20
18
16
14
12
10
0.2 0.6 1 1.4 1.8 2.2 2.6 3
Gms
Gma
IS21I
2
50
45
40
35
30
25
20
15
10
5
0
0.1
1
10
f=1 GHz
2 GHz
3 GHz
4 GHz
5 GHz
6 GHz
30
25
20
15
10
5
0
0
2
4
6
8
10
12
14
16
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相關代理商/技術參數 |
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|---|---|
| Q62702-B631 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
| Q62702B634 | 制造商:INFINEON 功能描述:DIODE |
| Q62702B-634 | 制造商:INFINEON 功能描述:DIODE |
| Q62702-B663 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt tuning diode Designed for low tuning voltage operation) |
| Q62702-B664 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Silicon Tuning Diode (High Q hyperabrupt dual tuning diode Designed for low tuning voltage operation) |
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