- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄361198 > Q62702-P955 (SIEMENS AG) Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter PDF資料下載
參數(shù)資料
| 型號(hào)： | Q62702-P955 |
| 廠商： | SIEMENS AG |
| 英文描述： | Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter |
| 中文描述： | Silizium針- Fotodiode麻省理工sehr庫(kù)澤爾Schaltzeit Silizium針- Fotodiode麻省理工Tageslichtsperrfilter |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大小： | 101K |
| 代理商： | Q62702-P955 |
BGC420
High Frequency Products
2
Edition A13, 05/99
Maximum Ratings
Parameter
Device current
Device voltage
Total power dissipation, T
s
≤
110°C
1)
Control voltage
Input Current for pin 1
Symbol
I
CC
Vcc
P
tot
Vc
Ir
Unit
mA
V
mW
V
μ
A
15
4.5
68
Vcc+0.5
380
Junction temperature
Ambient temperature range
Storage temperature range
T
j
T
A
T
stg
150
°
C
°
C
°
C
-65...+150
-65...+150
Thermal Resistance
Junction-soldering point
1)
1)TS is measured on the Ground lead at the soldering point to the pcb
.
R
th JS
≤
270
K/W
Electrical Specifications (Measured in Test Fixture applying the circuit specified in Figure 1
with Rx=82
W
),
Tc=25°C, Vcc=3V, I
CC
￡
7mA unless noted
Symbol
Gp
Parameter
Power Gain (
￥
S
21
￥
2
)
Unit
dB
Min
17.5
14.5
Typ
19
16
1.3
1.5
1
1
15
15
7
9
4
7
3.7
2.5
<10
35
-60
Max
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
NF
Noise Figure (in 50
W
System)
dB
1.5
1.7
P
-1dB
Output Power at 1dB Gain Compression f=900MHz
(in 50
W
System)
Third Order Intercept Point
(Output,
G
Opt
)
Input Return Loss
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
f=900MHz
f=1.8GHz
dBm
IP
3
dBm
RL
in
dB
RL
out
Output Return Loss
dB
t
on
t
off
I
leak
I
VcOn
I
VcOff
V
cmin
V
cmax
2)
A positive sign denotes a current flowing form the Pin into the external circuit.
On Switching Time
3)
Off Switching Time
3)
Leakage Current In Sleep Mode
Controll Pin (Vc) Current in Active Mode
2)
Controll Pin (Vc) Current in Sleep Mode
2)
Minimum Voltage at Vc for Sleep Mode
Maximum Voltage at Vc for Active Mode
μs
μs
μA
μA
nA
V
V
V
cc
- 0.3V
0V+0.3V
3)
This values are valid for C2=1nF, C3=100pF and 220pF Coupling capacitors at RFin and RFout.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| Q62702-P956 | Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit Silizium-PIN-Fotodiode mit Tageslichtsperrfilter |
| Q62702-P957 | NPN-Silizium-Fototransistor Silicon NPN Phototransistor |
| Q62702-P96 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| Q62702-P98 | GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter |
| Q62702-S122 | NPN SILICON PLANAR TRANSISTORS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| Q62702-Y147 | 制造商:GILB 功能描述: |
| Q62703Q0070 | 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
| Q62703Q0071 | 制造商:OSRAM 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH 制造商:OSRAM Opto Semiconductors 功能描述:LED IrLED 950nm 6-Pin 制造商:OSRAM Opto Semiconductors 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS |
| Q62703Q0072 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER ARRAY MINI GAAS 950NM |
| Q62703Q0073 | 制造商:OSRAM 功能描述:GAAS INFRARED EMITTING DIODE ARRAYS 制造商:OSRAM 功能描述:LED IRLED 950NM 6PIN - Bulk 制造商:OSRAM 功能描述:EMITTER IR ARRAY 950NM MINI TH |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。