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參數(shù)資料
| 型號： | 2SK3062-S |
| 廠商： | NEC Corp. |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; Body Material:Aluminum; Series:PT06; Number of Contacts:3; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Circular Contact Gender:Pin; Insert Arrangement:8-3 |
| 中文描述： | 開關(guān)N溝道功率場效應(yīng)晶體管工業(yè)用 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 69K |
| 代理商： | 2SK3062-S |
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confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
1998,1999
MOS FIELD EFFECT TRANSISTOR
2SK3062
SWITCHING
N-CHANNEL POWER MOS FET
INDUSTRIAL USE
DATA SHEET
Document No.
Date Published
Printed in Japan
D13101EJ1V0DS00 (1st edition)
April 1999 NS CP(K)
DESCRIPTION
This product is N-Channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Low on-state resistance
R
DS(on)1
= 8.5 m
MAX. (V
GS
= 10
V, I
D
= 35
A)
R
DS(on)2
= 12 m
MAX. (V
GS
= 4.0
V, I
D
= 35
A)
Low C
iss
: C
iss
= 5200
pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 °C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
60
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(AC)
±20
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS(DC)
+20,
10
V
Drain Current (DC)
Drain Current (Pulse)
Note1
I
D(DC)
±70
A
I
D(pulse)
±280
A
Total Power Dissipation (T
C
= 25°C)
P
T
100
W
Total Power Dissipation (T
A
= 25°C)
P
T
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note2
Single Avalanche Energy
Note2
T
stg
–55 to +150
°C
I
AS
35
A
E
AS
122.5
mJ
Notes 1.
PW
≤
10
μ
s, Duty cycle
≤
1 %
2.
Starting Tch = 25 °C, R
G
= 25
,
V
GS
= 20 V
→
0 V
THERMAL RESISTANCE
Channel to Case
R
th(ch-C)
1.25
°C/W
Channel to Ambient
R
th(ch-A)
83.3
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3062
TO-220AB
2SK3062-S
TO-262
2SK3062-ZJ
TO-263
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3062-Z | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 70A I(D) | TO-263AB |
| 2SK3062-ZJ | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE |
| 2SK3064 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel MOS FET |
| 2SK306400L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3064G0L | 功能描述:MOSFET N-CH 30V .1A S-MINI-3P RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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