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參數資料
| 型號： | 2SK30651000 |
| 廠商： | Rohm CO.,LTD. |
| 英文描述： | Small switching (60V, 2A) |
| 中文描述： | 小開關（60V的2A號） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 94K |
| 代理商： | 2SK30651000 |
2SK3065
Transistors
Small switching (60V, 2A)
2SK3065
!
Features
1) Low on resistance.
2) High-speed switching.
3) Optimum for a pocket resource etc. because of
undervoltage actuation (2.5V actuation).
4) Driving circuit is easy.
5) Easy to use parallel.
6) It is strong to an electrostatic discharge.
!
Structure
Silicon N-channel
MOS FET transistor
!
External dimensions
(Units : mm)
ROHM
: MPT3
E I A J : SC-62
(1) Gate
(2) Drain
(3) Source
0
2
+
0
0.05
+
0.1
+
0.2
0.1
(3)
(2)
(1)
1
±
0
0
±
0
3.0
±
0.2
1.5
±
0.1
1.5
±
0.1
0.4
±
0.1
0.5
±
0.1
0.4
±
0.1
0.4
1.5
±
0.1
4.5
1.6
±
0.1
Abbreviated symbol : KE
+
0
4
0
!
Absolute maximum ratings
(Ta = 25
°
C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Total power dissipation(Tc=25
°
C)
Channel temperature
Storage temperature
V
DSS
V
GSS
I
DR
P
D
Tch
60
V
V
A
A
W
°
C
°
C
±
20
2
I
D
I
DRP
1
A
I
DP
1
Continuous
Pulsed
Continuous
Pulsed
A
8
2
8
150
Tstg
55
～+
150
Symbol
Limits
Unit
1 Pw
≤
10
μ
s, Duty cycle
≤
1%
2 When mounted on a 40
×
40
×
0.7 mm alumina board.
Reverse drain
current
2
2
0.5
!
Internal equivalent circuit
Drain
Source
Gate
Gate
Protection
Diode
A protection diode has been built in between the
gate and the source to protect against static
electricity when the product is in use.
Use the protection circuit when rated voltages are
exceeded.
!
Electrical characteristics
(Ta = 25
°
C)
Parameter
Gate-source leakage
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Pw
≤
300
μ
s, Duty cycle
≤
1%
Test Conditions
V
GS
=
0V
f
=
1MHz
V
DS
=
10V
V
GS
=
4V
I
D
=
1A, V
DD
30V
R
L
=
30
R
G
=
10
μ
A
pF
S
Unit
V
μ
A
V
pF
pF
ns
ns
ns
ns
I
D
=
1A, V
GS
=
4V
60
0.8
1.5
Min.
160
0.25
Typ.
85
25
20
50
120
70
0.35
±
10
10
1.5
0.32
Max.
0.45
I
D
=
1A, V
GS
=
2.5V
I
D
=
1A, V
DS
=
10V
I
D
=
1mA, V
GS
=
0V
V
DS
=
60V, V
GS
=
0V
V
GS
=
±
20V, V
DS
=
0V
V
DS
=
10V, I
D
=
1mA
I
GSS
I
DSS
Y
fs
C
iss
Symbol
C
oss
C
rss
t
r
t
f
V
(BR)DSS
V
GS(th)
R
DS(on)
R
DS(on)
t
d(on)
t
d(off)
Static drain-source on-state
resistance
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相關代理商/技術參數 |
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| 2SK3065T100 | 功能描述:MOSFET N-CH 60V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK3066 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | SMT |
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