- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369203 > 2SK3113B(1)-S27-AY (NEC Corp.) MOS FIELD EFFECT TRANSISTOR PDF資料下載
參數(shù)資料
| 型號： | 2SK3113B(1)-S27-AY |
| 廠商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR |
| 中文描述： | MOS場效應(yīng)管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 195K |
| 代理商： | 2SK3113B(1)-S27-AY |
Data Sheet D18061EJ3V0DS
4
2SK3113B
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
I
D
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
V
GS
= 10 V
Pulsed
8 V
V
DS
- Drain to Source Voltage - V
I
D
-
0.01
0.1
1
10
100
0
5
10
15
20
25
30
V
DS
= 10 V
Pulsed
T
ch
= 125°C
75°C
25°C
25°C
V
GS
- Gate to Source Voltage - V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
V
G
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
-50
0
50
100
150
V
DS
= 10 V
I
D
= 1 mA
T
ch
- Channel Temperature -
°
C
|
f
0.01
0.1
1
10
0.01
0.1
1
10
V
DS
= 10 V
Pulsed
T
ch
=
25°C
25°C
75°C
125°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
R
D
Ω
2.0
3.0
4.0
5.0
6.0
7.0
8.0
0
5
10
15
20
25
I
D
= 2.0 A
1.0 A
Pulsed
V
GS
– Gate to Source Voltage - V
R
D
Ω
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0.01
0.1
1
10
V
GS
= 10 V
20 V
Pulsed
I
D
- Drain Current - A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK3113B-S15-AY | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E1-AY | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E2-AY | MOS FIELD EFFECT TRANSISTOR |
| 2SK3113 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3113-Z | SWITCHING N-CHANNEL POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3113B-S15 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3113B-S15-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113B-ZK-E1-AY | 制造商:Renesas Electronics Corporation 功能描述:REN2SK3113B-ZK-E1-AY SWITCHING N-CHANNEL |
| 2SK3113B-ZK-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR |
| 2SK3113-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。