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參數(shù)資料
| 型號(hào)： | 2SK3481-ZJ |
| 廠商： | NEC Corp. |
| 英文描述： | SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | 開關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 4/8頁 |
| 文件大小： | 76K |
| 代理商： | 2SK3481-ZJ |
Data Sheet D15063EJ1V0DS
4
2SK3481
FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
Pulsed
1
2
3
4
5
1
0.1
0.01
10
100
T
A
=
40
C
T
A
=
C
25
C
75
C
150
C
C
C
C
V
DS
= 10 V
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
2
3
4
1
0
0
20
60
40
80
5
6
V
GS
= 10 V
4.5 V
Pulsed
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
I
D
- Drain Current - A
f
0.01
0.1
1
10
100
10
100
0.1
0.01
1
Pulsed
V
DS
= 10 V
T
= 150
C
75
C
25
C
40
C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
80
V
GS
- Gate to Source Voltage - V
R
D
5
0
10
15
20
Pulsed
60
40
20
0
15 A
I
D
= 30 A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
1
0.1
80
60
40
20
0
10
100
Pulsed
V
GS
= 4.5 V
10 V
GATE CUT-OFF VOLTAGE vs.
CHANNEL TEMPERATURE
T
ch
- Channel Temperature -
C
V
G
V
DS
= 10 V
I
D
= 1 mA
1
2
3
4
50
0
50
100
150
0
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3481-ZJ-E1 | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SK3482 | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3482-AZ | 功能描述:MOSFET N-CH 100V MP-3/TO-251 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK3482-Z | 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3482-Z-AZ | 制造商:Renesas Electronics 功能描述:Nch 100V 36A 33m@10V TO252 Bulk 制造商:Renesas 功能描述:Trans MOSFET N-CH 100V 36A 3-Pin(2+Tab) TO-252 |
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