- 您現(xiàn)在的位置：買賣IC網 > PDF目錄369206 > 2SK3507-ZK (NEC Corp.) PROFET™: Smart High Side Switches; Package: PG-TO252-5; Channels: 1.0; R<sub>ON</sub> @ Tj = 25°C : 12.0 mOhm; Recommended Operating Voltage Range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense PDF資料下載
參數(shù)資料
| 型號： | 2SK3507-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | PROFET™: Smart High Side Switches; Package: PG-TO252-5; Channels: 1.0; R<sub>ON</sub> @ Tj = 25°C : 12.0 mOhm; Recommended Operating Voltage Range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 143K |
| 代理商： | 2SK3507-ZK |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
MOS FIELD EFFECT TRANSISTOR
2SK3507
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D15387EJ1V0DS00 (1st edition)
Date Published December 2003 NS CP(K)
Printed in Japan
2001
DESCRIPTION
The 2SK3507 is N-channel MOS FET device that features
a low on-state resistance and excellent switching characteristics,
designed for low voltage high current applications such as DC/DC
converter with synchronous rectifier.
FEATURES
4.5 V drive available
Low on-state resistance
R
DS(on)1
= 45 m
MAX. (V
GS
= 10
V, I
D
= 11
A)
Low gate charge
Q
G
= 8.5 nC TYP. (V
DD
= 24 V, V
GS
= 10 V, I
D
= 22 A)
Built-in G-S protection diode
Surface mount package available
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
30
V
Gate to Source Voltage (V
DS
= 0 V)
V
GSS
±16
V
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
Note1
I
D(DC)
±22
A
I
D(pulse)
±45
A
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation
Note2
P
T1
20
W
P
T2
1.5
W
Channel Temperature
T
ch
150
°C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to +150
°C
I
AS
10
A
E
AS
10
mJ
Notes 1.
PW
≤
10
μ
s, Duty Cycle
≤
1%
2.
Mounted on glass epoxy board of 1 inch x 1 inch x 1.6 mm
3.
Starting T
ch
= 25°C, V
DD
= 15 V, R
G
= 25
, V
GS
= 20
→
0 V
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3507-ZK
TO-252 (MP-3ZK)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK3511-ZJ | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3511 | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3511-S | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3511-Z | SWITCHING N-CHANNEL POWER MOSFET |
| 2SK3557 | Low-Noise HF Amplifier Applications |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK3510-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3511(AZ) | 制造商:Renesas Electronics 功能描述:Cut Tape |
| 2SK3511-AZ | 功能描述:MOSFET N-CH 75V MP-25/TO-220 RoHS:是 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK3512-01LSC | 制造商:Fuji Electric 功能描述: |
| 2SK3513-01LSC | 制造商:Fuji Electric 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復。