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參數(shù)資料
| 型號： | 2SK3507-ZK |
| 廠商： | NEC Corp. |
| 英文描述： | PROFET™: Smart High Side Switches; Package: PG-TO252-5; Channels: 1.0; R<sub>ON</sub> @ Tj = 25°C : 12.0 mOhm; Recommended Operating Voltage Range: 5.5 - 20.0 V; IL(SC): 65.0 A; Diagnostic: Sense |
| 中文描述： | 開關N溝道功率MOSFET |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 143K |
| 代理商： | 2SK3507-ZK |
Data Sheet D15387EJ1V0DS
2
2SK3507
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 30 V, V
GS
= 0 V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
16 V, V
DS
= 0 V
±
10
μ
A
Gate Cut-off Voltage
Forward Transfer Admittance
Note
V
GS(off)
V
DS
= 10 V, I
D
= 1 mA
1.5
2.5
V
| y
fs
|
V
DS
= 4.0 V, I
D
= 11 A
6
S
Drain to Source On-state Resistance
Note
R
DS(on)1
V
GS
= 10 V, I
D
= 11 A
28
45
m
R
DS(on)2
V
GS
= 4.5 V, I
D
= 11 A
46
76
m
Input Capacitance
C
iss
V
DS
= 10 V
360
pF
Output Capacitance
C
oss
V
GS
= 0 V
125
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
65
pF
Turn-on Delay Time
t
d(on)
V
DD
= 15 V, I
D
= 11 A
6.6
ns
Rise Time
t
r
V
GS
= 10 V
3.6
ns
Turn-off Delay Time
t
d(off)
R
G
= 10
16
ns
Fall Time
t
f
5.3
ns
Total Gate Charge
Q
G
V
DD
= 24 V
8.5
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V
2
nC
Gate to Drain Charge
Body Diode Forward Voltage
Note
Q
GD
I
D
= 22 A
2.1
nC
V
F(S-D)
I
F
= 22 A, V
GS
= 0 V
1.0
V
Reverse Recovery Time
t
rr
I
F
= 22 A, V
GS
= 0 V
31
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
26
nC
Note
Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
50
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
μ
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