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參數資料
| 型號： | FLLD261 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | HIGH CONDUCTANCE LOW LEAKAGE DIODE |
| 中文描述： | 0.25 A, 2 ELEMENT, SILICON, SIGNAL DIODE, TO-236AB |
| 文件頁數： | 1/5頁 |
| 文件大小： | 51K |
| 代理商： | FLLD261 |
FLLD261
HIGH CONDUCTANCE LOW LEAKAGE DIODE
P8A
P
D
. . . .350 mW @ T
A
= 25 Deg C
B
V
. . . .200 V (M
IN
) @ I
R
= 5 uA
ABSOLUTE MAXIMUM RATINGS
(NOTE 1)
TEMPERATURES
Storage Temperature -55 to +150 Degrees C
Operating Junction Temperature -55 to +150 Degrees C
POWER DISSIPATION
(NOTES 2 & 3)
Total Device Dissipation at TA = 25 Deg C
Derating Factor per Degree C
350 mW
2.8 mW
VOLTAGES & CURRENTS
WIV
Working Inverse Voltage
IO
Average Rectified Current
IF
DC Forward Current
if
Recurrent Peak Forward Current
if (surge) Peak Forward Surge Current
Pulse width = 1 second
Pulse width = 1 microsec
100 V
250 mA
600 mA
700 mA
1.0 A
3.0 A
PACKAGE
TO-236AB (Low)
3
1
2
NOTES:
1. These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
SYM
CHARACTERISTICS
MIN MAX UNITS
TEST CONDITIONS
B
V
Breakdown Voltage
200
V
I
R
=
5.0 uA
I
R
Reverse Voltage Leakage Current
5.0
5.0
nA
uA
V
R
= 100 V
V
R
= 100 V
T
A
= 150 Deg C
V
F
Forward Voltage
1.40
V
I
F
=
200 mA
C
T
Diode Capacitance
4.0
pF
V
R
= 1.0 V
f = 1.0 MH
Z
T
RR
Reverse Recovery Time
400
ns
I
F
= I
R
= 50 to 400 mA
I
RR
= 10% I
R
R
L
= 100 ohms
T
FR
Forward Recovery Time
10
ns
I
F
=
10 mA
V
FM
Peak Forward Voltage
0.9
Typ
V
I
F
=
Rise Time = 5 ns +/-20%
10 mA
ELECTRICAL CHARACTERISTICS
(25 Degrees C Ambient Temperature unless otherwise stated)
3
2
1
CONNECTION DIAGRAMS
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| FLLD261 | SILICON PLANAR LOW LEAKAGE SERIES DIODE PAIR |
| FLM0910-12F | X-Band Internally Matched FET |
| FLM0910-15F | X-Band Internally Matched FET |
| FLM0910-25F | X-Band Internally Matched FET |
| FLM0910-3F | X, Ku-Band Internally Matched FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FLLD261 | 制造商:Fairchild Semiconductor Corporation 功能描述:Small Signal Diode |
| FLLD261TA | 功能描述:整流器 - RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FLLD261TC | 功能描述:整流器 - RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| FLLD263 | 制造商:ZETEX 制造商全稱:ZETEX 功能描述:SILICON PLANAR LOW LEAKAGE COMMON ANODE DIODE PAIR |
| FLLD263TA | 功能描述:整流器 - RoHS:否 制造商:Vishay Semiconductors 產品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復時間:1.2 us 正向連續電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
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