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參數資料
| 型號： | FLM0910-3F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 308K |
| 代理商： | FLM0910-3F |
1
Edition 1.2
August 2004
FLM0910-3F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
25.0
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 13.0 and -1.4 mA respectively with
gate resistance of 100
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power-added Efficiency
3rd Order Intermodulation
Distortion
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
-
-
1400
1300
-1.5
-
2100
-
-0.5
-5.0
-3.0
-
6.5
7.5
-
-
29
-
34.0
35.0
-
VDS = 5V, IDS = 70mA
IGS = -70
μ
A
VDS = 5V, IDS = 900mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS
=
0.6 IDSS (Typ.),
f =9.5 ~10.5 GHz,
ZS=ZL= 50 ohm
f = 10.5 GHz,
f = 10 MHz
2-Tone Test
Pout = 24.0dBm S.C.L.
mA
mS
V
V
dB
%
-44
-46
-
dBc
dBm
G1dB
Idsr
η
add
Drain Current
-
900
1100
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Channel to Case
Thermal Resistance
-
5.0
6.0
°
C/W
Rth
Tch
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IA
10V x Idsr x Rth
Channel Temperature Rise
-
-
66
°
C
DESCRIPTION
The FLM0910-3F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 35.0dBm (Typ.)
High Gain: G1dB= 7.5dB (Typ.)
High PAE:
η
add= 29% (Typ.)
Low IM3= -46dBc@Po = 24.0dBm
Broad Band: 9.5 ~ 10.5GHz
Impedance Matched Zin/Zout = 50
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相關代理商/技術參數 |
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|---|---|
| FLM0910-4F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM0910-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, X-Band, 7.5dB, 9.5 10.5GHz, 2200mA, Bulk |
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| FLM1/2 | 制造商:Littelfuse 功能描述: |
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