- 您現在的位置：買賣IC網 > PDF目錄375831 > FLM1213-12F (SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.) X, Ku-Band Internally Matched FET PDF資料下載
參數資料
| 型號： | FLM1213-12F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 252K |
| 代理商： | FLM1213-12F |
1
Edition 1.3
August 2004
FLM1213-12F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
57.6
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 34.0 and -5.0 mA respectively with
gate resistance of 50
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
6000
9000
-0.5
-1.5
-3.0
39.5
40.5
-
4.5
5.5
-
VDS = 5V, IDS = 300mA
IGS = -340
μ
A
VDS = 5V, IDS = 3600mA
VDS = 5V, VGS = 0V
VDS = 10V
f = 12.7 ~ 13.2 GHz
IDS = 0.6 IDSS(Typ.)
ZS = ZL = 50
mA
V
-
5000
-
mS
-5
-
-
V
dB
dBm
Vp
VGSO
P1dB
G1dB
Drain Current
-
3600
4500
mA
Idsr
η
add
G
Power-Added Efficiency
-
24
-
%
Gain Flatness
-
-
±
0.6
dB
Thermal Resistance
Channel to Case
-
2.3
2.6
°
C/W
°
C
CASE STYLE: IB
Rth
Tch
3rd Order Intermodulation
Distortion
f = 13.2GHz,
f = 10MHz
2-Tone Test
Pout = 28dBm S.C.L.
-42
-45
-
dBc
IM3
Test Conditions
Unit
Limit
Typ.
Max.
Min.
G.C.P.: Gain Compression Point
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
FEATURES
High Output Power: P1dB= 40.5dBm (Typ.)
High Gain: G1dB= 5.5dB (Typ.)
High PAE:
η
add= 24% (Typ.)
IM3= -45dBc@Po = 28dBm
Broad Band: 12.7 ~ 13.2GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
DESCRIPTION
The FLM1213-12F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
相關PDF資料 |
PDF描述 |
|---|---|
| FLM1213-6F | X, Ku-Band Internally Matched FET |
| FLM1314-3F | X, Ku-Band Internally Matched FET |
| FLM1314-6F | X, Ku-Band Internally Matched FET |
| FLM1414-12F | X, Ku-Band Internally Matched FET |
| FLM1414-15F | X,Ku-Band Internally Matched FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FLM1213-4F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Ku-Band Internally Matched FET |
| FLM1213-6F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1213-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 12.7 13.2GHz, 2200mA, Bulk |
| FLM1314-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1314-18F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 5000mA, Bulk |
發布緊急采購，3分鐘左右您將得到回復。