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參數資料
| 型號： | FLM1314-6F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | X, Ku-Band Internally Matched FET |
| 中文描述： | 十，Ku波段內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 298K |
| 代理商： | FLM1314-6F |
1
Edition 1.4
August 2004
FLM1314-6F
X, Ku-Band Internally Matched FET
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
31.2
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -2.8 mA respectively with
gate resistance of 100
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
-
2800
4200
-
2350
-
-0.5
-1.5
-3.0
-5.0
-
-
5.0
5.5
-
-
22
-
36.5
37.5
-
VDS = 5V, IDS =120mA
IGS = -120
μ
A
VDS = 5V, IDS =1800mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS
=
0.6 IDSS (Typ.),
f = 13.75 ~ 14.5 GHz,
ZS=ZL=50 ohm
f = 14.5GHz,
f = 10 MHz
2-Tone Test
Pout =26.5dBm S.C.L.
Channel to Case
mA
mS
V
dB
%
-42
-45
-
dBc
dBm
V
Vp
VGSO
P1dB
G1dB
Idsr
η
add
Drain Current
-
1800
2100
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Thermal Resistance
-
4.0
4.5
°
C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE: IA
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
Tch
DESCRIPTION
The FLM1314-6F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 37.5dBm (Typ.)
High Gain: G1dB= 5.5dB (Typ.)
High PAE:
η
add= 22% (Typ.)
Broad Band: 13.75 ~ 14.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed
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相關代理商/技術參數 |
參數描述 |
|---|---|
| FLM1314-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 13.75 14.5GHz, 2400mA, Bulk |
| FLM14/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM1414-12F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:X, Ku-Band Internally Matched FET |
| FLM1414-15F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6dB, 14.0 14.5GHz, 4200mA, Bulk |
| FLM1414-3F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, Ku-Band, 6.5dB, 14.0 14.5GHz, 825mA, Bulk |
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