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參數(shù)資料
| 型號(hào)： | FLM3135-18F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內(nèi)部匹配場(chǎng)效應(yīng)管 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 293K |
| 代理商： | FLM3135-18F |
1
Edition 1.1
August 2004
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
83.3
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 26.0 and -11.6 mA respectively with
gate resistance of 25
.
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
G1dB
Idsr
η
add
-
-
7.5
8000
-1.5
11.2
-
-3.0
-0.5
-5.0
-
-
9.5
10.5
-
-
37
-
42.0
43.0
-
VDS = 5V, IDS = 480mA
IGS = -480
μ
A
VDS = 5V, IDS = 4800mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS
=
0.55 IDSS (Typ.),
f = 3.1 ~ 3.5 GHz,
ZS=ZL= 50 ohm
f = 3.5 GHz,
f = 10 MHz
2-Tone Test
Pout = 32.0dBm S.C.L.
A
mS
V
dB
%
-42
-45
-
dBc
dBm
V
Drain Current
-
4800
6000
mA
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Channel to Case
Thermal Resistance
-
1.6
1.8
°
C/W
Rth
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
CASE STYLE:
IK
10V x Idsr x Rth
Channel Temperature Rise
-
-
80
°
C
Tch
DESCRIPTION
The FLM3135-18F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 43.0dBm (Typ.)
High Gain: G1dB= 10.5dB (Typ.)
High PAE:
η
add= 37% (Typ.)
Low IM3= -45dBc@Po = 32.0dBm
Broad Band: 3.1 ~ 3.5GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
FLM3135-18F
C-Band Internally Matched FET
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|---|---|
| FLM3439-18F | C-Band Internally Matched FET |
| FLM3439-25F | C-Band Internally Matched FET |
| FLM3439-4F | C-Band Internally Matched FET |
| FLM3439-8F | C-Band Internally Matched FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FLM3135-4F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, S-Band, 12dB, 3.1 3.5GHz, 1100mA, Bulk |
| FLM3135-8F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM32/10 | 制造商:LITTELFUSE 制造商全稱:Littelfuse 功能描述:Axial Lead and Cartridge Fuses - Midget |
| FLM3439-12F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:C-Band Internally Matched FET |
| FLM3439-18F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
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