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參數資料
| 型號： | FLM4450-25F |
| 廠商： | SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC. |
| 英文描述： | C-Band Internally Matched FET |
| 中文描述： | C波段內部匹配場效應管 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 296K |
| 代理商： | FLM4450-25F |
1
Edition 1.3
August 2004
Item
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
VDS
VGS
15
-5
93.7
-65 to +175
175
Tc = 25
°
C
V
V
W
°
C
°
C
PT
Tstg
Tch
Condition
Unit
Rating
ABSOLUTE MAXIMUM RATING (Ambient Temperature Ta=25
°
C)
Fujitsu recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 10 volts.
2. The forward and reverse gate currents should not exceed 64.0 and -11.2 mA respectively with
gate resistance of 25
.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25
°
C)
Item
Saturated Drain Current
Transconductance
Pinch-off Voltage
Gate Source Breakdown Voltage
Power-added Efficiency
3rd Order Intermodulation
Distortion
Output Power at 1dB G.C.P.
Power Gain at 1dB G.C.P.
Symbol
IDSS
gm
Vp
VGSO
P1dB
-
-
11.6
5800
-2.0
17.4
-
-3.5
-1.0
-5.0
-
-
8.5
9.5
-
-
40
-
43.5
44.5
-
VDS = 5V, IDS = 600mA
IGS = -600
μ
A
VDS = 5V, IDS = 6800mA
VDS = 5V, VGS = 0V
VDS =10V,
IDS = 0.55 IDSS (Typ.),
f = 4.4 ~ 5.0 GHz,
ZS=ZL= 50 ohm
f = 5.0 GHz,
f = 10 MHz
2-Tone Test
Pout = 33.5dBm S.C.L.
Channel to Case
10V x Idsr x Rth
A
mS
V
dB
%
-44
-46
-
dBc
dBm
V
G1dB
Drain Current
-
6200
7440
mA
Idsr
η
add
IM3
Gain Flatness
-
-
±
0.6
dB
G
Test Conditions
Unit
Limit
Typ.
Max.
Min.
Thermal Resistance
Channel Temperature Rise
CASE STYLE:
IK
-
-
1.4
-
1.6
100
°
C/W
°
C
Rth
Tch
G.C.P.: Gain Compression Point, S.C.L.: Single Carrier Level
DESCRIPTION
The FLM4450-25F is a power GaAs FET that is internally matched for
standard communication bands to provide optimum power and gain in a
50 ohm system.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
High Output Power: P1dB= 44.5dBm (Typ.)
High Gain: G1dB= 9.5dB (Typ.)
High PAE:
η
add= 40% (Typ.)
Low IM3= -46dBc@Po = 33.5dBm
Broad Band: 4.4 ~ 5.0GHz
Impedance Matched Zin/Zout = 50
Hermetically Sealed Package
FLM4450-25F
C-Band Internally Matched FET
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相關代理商/技術參數 |
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|---|---|
| FLM4450-45F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
| FLM4450-4F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 11dB, 4.4 5.0GHz, 1100mA, Bulk |
| FLM4450-8F | 制造商:SUMITOMO ELECTRIC Device Innovations Inc 功能描述:High Power GaAs FETs, C-Band, 10dB, 4.4 5.0GHz, 2200mA, Bulk |
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| FLM5053-8F | 制造商:EUDYNA 制造商全稱:Eudyna Devices Inc 功能描述:C-Band Internally Matched FET |
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