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參數資料
| 型號： | FM1808 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 元件分類： | DRAM |
| 英文描述： | 4Kb FRAM Serial 3V Memory |
| 中文描述： | 4Kb的鐵電串行3V的記憶 |
| 文件頁數： | 3/12頁 |
| 文件大?。?/td> | 89K |
| 代理商： | FM1808 |
Ramtron
FM1808-70
27 July 2000
3/12
Overview
The FM1808 is a bytewide FRAM memory. The
memory array is logically organized as 32,768 x 8 and
is accessed using an industry standard parallel
interface. The FM1808 is inherently nonvolatile via its
unique ferroelectric process. All data written to the
part is immediately nonvolatile with no delay.
Functional operation of the FRAM memory is similar
to SRAM type devices. The major operating
difference between the FM1808 and an SRAM
(beside nonvolatile storage) is that the FM1808
latches the address on the falling edge of /CE.
Memory Architecture
Users access 32,768 memory locations each with 8
data bits through a parallel interface. The complete
address of 15-bits specifies each of the 32,768 bytes
uniquely. Internally, the memory array is organized
into 32 blocks of 8Kb each. The 5 most-significant
address lines decode one of 32 blocks. This block
segmentation has no effect on operation, however the
user may wish to group data into blocks by its
endurance requirements as explained in a later
section.
The access and cycle time are the same for read and
write memory operations. Writes occur immediately at
the end of the access with no delay. Unlike an
EEPROM, it is not necessary to poll the device for a
ready condition since writes occur at bus speed. A
pre-charge operation, where /CE goes inactive, is a
part of every memory cycle. Thus unlike SRAM, the
access and cycle times are not equal.
Note that the FM1808 has no special power-down
demands. It will not block user access and it contains
no power-management circuits other than a simple
internal power-on reset. It is the user’s responsibility
to ensure that VDD is within data sheet tolerances to
prevent incorrect operation.
Memory Operation
The FM1808 is designed to operate in a manner very
similar to other bytewide memory products. For users
familiar with BBSRAM, the performance is comparable
but the bytewide interface operates in a slightly
different manner as described below. For users
familiar with EEPROM, the obvious differences result
from the higher write performance of FRAM
technology including NoDelay writes and much
higher write endurance.
Read Operation
A read operation begins on the falling edge of /CE. At
this time, the address bits are latched and a memory
cycle is initiated. Once started, a full memory cycle
must be completed internally even if /CE goes
inactive. Data becomes available on the bus after the
access time has been satisfied.
After the address has been latched, the address value
may be changed upon satisfying the hold time
parameter. Unlike an SRAM, changing address values
will have no effect on the memory operation after the
address is latched.
The FM1808 will drive the data bus when /OE is
asserted to a low state. If /OE is asserted after the
memory access time has been satisfied, the data bus
will be driven with valid data. If /OE is asserted prior
to completion of the memory access, the data bus will
not be driven until valid data is available. This feature
minimizes supply current in the system by eliminating
transients due to invalid data. When /OE is inactive
the data bus will remain tri-stated.
Write Operation
Writes occur in the FM1808 in the same time interval
as reads. The FM1808 supports both /CE and /WE
controlled write cycles. In all cases, the address is
latched on the falling edge of /CE.
In a /CE controlled write, the /WE signal is asserted
prior to beginning the memory cycle. That is, /WE is
low when /CE falls. In this case, the part begins the
memory cycle as a write. The FM1808 will not drive
the data bus regardless of the state of /OE.
In a /WE controlled write, the memory cycle begins on
the falling edge of /CE. The /WE signal falls after the
falling edge of /CE. Therefore, the memory cycle
begins as a read. The data bus will be driven
according to the state of /OE until /WE falls. The
timing of both /CE and /WE controlled write cycles is
shown in the electrical specifications.
Write access to the array begins asynchronously
after the memory cycle is initiated. The write access
terminates on the rising edge of /WE or /CE,
whichever is first. Data set-up time, as shown in the
electrical specifications, indicates the interval during
which data cannot change prior to the end of the write
access.
Unlike other truly nonvolatile memory technologies,
there is no write delay with FRAM. Since the read and
write access times of the underlying memory are the
same, the user experiences no delay through the bus.
相關PDF資料 |
PDF描述 |
|---|---|
| FM1808-120-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-P | 4Kb FRAM Serial 3V Memory |
| FM1808-70-S | 4Kb FRAM Serial 3V Memory |
| FM200TU-07A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
| FM200TU-2A | HIGH POWER SWITCHING USE INSULATED PACKAGE |
相關代理商/技術參數 |
參數描述 |
|---|---|
| FM1808-120-P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-120-S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:256Kb Bytewide FRAM Memory |
| FM1808-70-P | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 功能描述:F-RAM 256K (32Kx8) 70ns 5V RoHS:否 存儲容量:512 Kbit 組織:64 K x 8 接口:SPI 工作電源電壓:2 V to 3.6 V 工作溫度范圍:- 40 C to + 85 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-8 封裝:Tube 制造商:Cypress Semiconductor |
| FM1808-70-PG | 制造商:Ramtron International Corporation 功能描述:Nonvolatile SRAM Memory IC Memory Type:F |
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