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參數資料
| 型號： | IRF840 |
| 廠商： | 意法半導體 |
| 英文描述： | N - CHANNEL 500V - 0.75ohm - 8A - TO-220 PowerMESH] MOSFET |
| 中文描述： | ? -頻道500V - 0.75ohm - 8A條-對220 PowerMESH] MOSFET的 |
| 文件頁數： | 4/7頁 |
| 文件大小： | 60K |
| 代理商： | IRF840 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); parameter T
j
Fig.8. Typical transconductance
g
fs
= f(I
D
); parameter T
j
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 4.25 A; V
GS
= 10 V
Fig.10. Gate threshold voltage
V
GS(TO)
= f(T
j
); conditions: I
D
= 0.25 mA; V
DS
= V
GS
Fig.11. Sub-threshold drain current.
I
D
= f(V
GS)
; conditions: T
j
= 25 C; V
DS
= V
GS
Fig.12. Typical capacitances, C
, C
, C
.
C = f(V
DS
); conditions: V
GS
= 0 V; f = 1 MHz
0
2
VGS, Gate-Source voltage (Volts)
4
6
8
10
0
5
10
15
20
25
PHP8N50
ID, Drain current (Amps)
VDS > ID x RDS(on)max
Tj = 25 C
Tj = 150 C
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
0
5
10
15
20
25
0
2
4
6
8
10
PHP8N50
ID, Drain current (A)
gfs, Transconductance (S)
Tj = 25 C
150 C
VDS > ID x RDS(on)max
0
1
2
VGS / V
3
4
ID / A
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
SUB-THRESHOLD CONDUCTION
typ
2 %
98 %
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2
1
0
a
1
10
100
1000
10
100
1000
10000
PHP8N50
VDS, Drain-Source voltage (Volts)
Junction capacitances (pF)
Ciss
Coss
Crss
March 1999
4
Rev 1.000
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PDF描述 |
|---|---|
| IRF840 | N-CHANNEL POWER MOSFETS |
| IRF840 | 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
| IRF840PBF | HEXFET POWER MOSFET |
| IRF840AL | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840AS | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF840 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF840_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩II MOSFET |
| IRF840_R4943 | 功能描述:MOSFET N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8401111 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTORS N-CHANNEL |
| IRF84093 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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