- 您現在的位置：買賣IC網 > PDF目錄360933 > IRF840 (SAMSUNG SEMICONDUCTOR CO. LTD.) N-CHANNEL POWER MOSFETS PDF資料下載
參數資料
| 型號： | IRF840 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數： | 1/7頁 |
| 文件大小： | 60K |
| 代理商： | IRF840 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
FEATURES
SYMBOL
QUICK REFERENCE DATA
Repetitive Avalanche Rated
Fast switching
High thermal cycling performance
Low thermal resistance
V
DSS
= 500 V
I
D
= 8.5 A
R
DS(ON)
≤
0.85
GENERAL DESCRIPTION
PINNING
SOT78 (TO220AB)
N-channel,
field-effect
intendedfor use in off-lineswitched
mode power supplies, T.V. and
computer monitor power supplies,
d.c.tod.c.converters,motorcontrol
circuits
and
general
switching applications.
enhancement
power
mode
PIN
DESCRIPTION
transistor,
1
gate
2
drain
purpose
3
source
tab
drain
The IRF840 is supplied in the
SOT78 (TO220AB) conventional
leaded package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
DSS
Drain-source voltage
V
DGR
Drain-gate voltage
V
GS
Gate-source voltage
I
D
Continuous drain current
CONDITIONS
T
j
= 25 C to 150C
T
j
= 25 C to 150C; R
GS
= 20 k
MIN.
-
-
-
-
-
-
-
- 55
MAX.
500
500
±
30
8.5
5.4
34
147
150
UNIT
V
V
V
A
A
A
W
C
T
mb
= 25 C; V
GS
= 10 V
T
mb
= 100 C; V
GS
= 10 V
T
mb
= 25 C
T
mb
= 25 C
I
DM
P
D
T
j
, T
stg
Pulsed drain current
Total dissipation
Operating junction and
storage temperature range
AVALANCHE ENERGY LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
E
AS
Non-repetitive avalanche
energy
CONDITIONS
Unclamped inductive load, I
= 7.4 A;
t
p
= 0.22 ms; T
j
prior to avalanche = 25C;
V
≤
50 V; R
GS
= 50
; V
GS
= 10 V; refer
to fig:17
MIN.
-
MAX.
531
UNIT
mJ
E
AR
Repetitive avalanche energy
1
I
= 8.5 A; t
= 2.5
μ
s; T
prior to
avalanche = 25C; R
GS
= 50
; V
GS
= 10 V;
refer to fig:18
Repetitive and non-repetitive
avalanche current
-
13
mJ
I
AS
, I
AR
-
8.5
A
d
g
s
1 2 3
tab
1
pulse width and repetition rate limited by T
j
max.
March 1999
1
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRF840 | 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
| IRF840PBF | HEXFET POWER MOSFET |
| IRF840AL | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840AS | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840 | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF840 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF840_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩II MOSFET |
| IRF840_R4943 | 功能描述:MOSFET N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8401111 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTORS N-CHANNEL |
| IRF84093 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
發布緊急采購，3分鐘左右您將得到回復。