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參數資料
| 型號： | IRF840 |
| 廠商： | SAMSUNG SEMICONDUCTOR CO. LTD. |
| 英文描述： | N-CHANNEL POWER MOSFETS |
| 中文描述： | N溝道功率MOSFET |
| 文件頁數： | 2/7頁 |
| 文件大?。?/td> | 60K |
| 代理商： | IRF840 |
Philips Semiconductors
Product specification
PowerMOS transistor
Avalanche energy rated
IRF840
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
0.85
K/W
in free air
-
60
-
K/W
ELECTRICAL CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
(BR)DSS
/ Drain-source breakdown
T
j
voltage temperature
coefficient
R
DS(ON)
Drain-source on resistance
V
GS(TO)
Gate threshold voltage
g
fs
Forward transconductance
I
DSS
Drain-source leakage current V
DS
= 500 V; V
GS
= 0 V
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA
MIN.
500
TYP. MAX. UNIT
-
-
V
V
DS
= V
GS
; I
D
= 0.25 mA
-
0.1
-
%/K
V
GS
= 10 V; I
= 4.8 A
V
DS
= V
; I
D
= 0.25 mA
V
DS
= 30 V; I
= 4.8 A
-
0.6
3.0
6
1
40
10
55
5.5
30
18
37
80
36
3.5
4.5
7.5
0.85
4.0
-
25
250
200
80
7
45
-
-
-
-
-
-
-
V
S
μ
A
μ
A
nA
nC
nC
nC
ns
ns
ns
ns
nH
nH
nH
2.0
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
V
DS
= 400 V; V
GS
= 0 V; T
j
= 125 C
I
GSS
Q
g(tot)
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
d
L
d
L
s
Gate-source leakage current V
GS
=
±
30 V; V
DS
= 0 V
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
Internal source inductance
I
D
= 8.5 A; V
DD
= 400 V; V
GS
= 10 V
V
DD
= 250 V; R
D
= 30
;
R
G
= 9.1
Measured from tab to centre of die
Measured from drain lead to centre of die
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
960
140
80
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
T
j
= 25 C unless otherwise specified
SYMBOL PARAMETER
I
S
Continuous source current
(body diode)
I
SM
Pulsed source current (body
diode)
V
SD
Diode forward voltage
t
rr
Reverse recovery time
Q
rr
Reverse recovery charge
CONDITIONS
T
mb
= 25C
MIN.
-
TYP. MAX. UNIT
-
8.5
A
T
mb
= 25C
-
-
34
A
I
S
= 8.5 A; V
GS
= 0 V
I
S
= 8.5 A; V
GS
= 0 V; dI/dt = 100 A/
μ
s
-
-
-
-
1.2
-
-
V
ns
μ
C
440
6.4
March 1999
2
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| IRF840 | 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET |
| IRF840PBF | HEXFET POWER MOSFET |
| IRF840AL | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840AS | Power MOSFET(Vdss=500V, Rds(on)max=0.85ohm, Id=8.0A) |
| IRF840 | Power MOSFET(Vdss=500V, Rds(on)=0.85ohm, Id=8.0A) |
相關代理商/技術參數 |
參數描述 |
|---|---|
| IRF840 | 制造商:STMicroelectronics 功能描述:MOSFET N TO-220 |
| IRF840_02 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 500V - 0.75ヘ - 8A TO-220 PowerMesh⑩II MOSFET |
| IRF840_R4943 | 功能描述:MOSFET N-CH POWER RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IRF8401111 | 制造商:IRF 制造商全稱:International Rectifier 功能描述:TRANSISTORS N-CHANNEL |
| IRF84093 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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