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參數(shù)資料
| 型號： | MB81ES653225 |
| 廠商： | Fujitsu Limited |
| 英文描述： | Consumer/Embedded Application Specific Memory for SiP |
| 中文描述： | 消費/嵌入式SIP應用程序特定的內(nèi)存 |
| 文件頁數(shù)： | 28/44頁 |
| 文件大小： | 485K |
| 代理商： | MB81ES653225 |
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MB81ES653225-12/-12L
28
(Continued)
(At recommended operating conditions unless otherwise noted.) *
1,
*
2,
*
3
*1 : All voltages are referenced to V
SS
.
*2 : DC characteristics are measured after following the “22. POWER-UP INITIALIZATION” procedure in section
“
■
FUNCTIONAL DESCRIPTION.”
*3 : I
DD
depends on the output termination or load condition, clock cycle rate, signal clocking rate.
The specified values are obtained with the output open and no termination resistor.
*4 : The measurement conditions of I
DD6
is assumed below.
Total power of devices in package (
Σ
pmax)
=
0.75 W
The thermal resistance of the package (
θ
ja)
=
20
°
C/W
Parameter
Symbol
Condition
Value
Unit
Min
Max
760
285
640
200
580
155
640
200
580
150
550
130
560
130
540
115
530
105
1000
450
760
290
640
205
Refresh Current
#2 *
4
(Average Power
Supply Current)
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
-12
-12L
I
DD6
Self-refresh;
t
CK
=
Min
CKE
≤
0.2 V
0 V
≤
V
IN
≤
V
IL
Max
V
IH
Min
≤
V
IN
≤
V
DDQ
TCSR
=
“00”
(Ta
≤
+
70
°
C)
PASR
=
“000”
(64 Mbit)
μ
A
PASR
=
“001”
(32 Mbit)
PASR
=
“010”
(16 Mbit)
TCSR
=
“01”
(Ta
≤
+
45
°
C)
PASR
=
“000”
(64 Mbit)
PASR
=
“001”
(32 Mbit)
PASR
=
“010”
(16 Mbit)
TCSR
=
“10”
(Ta
≤
+
15
°
C)
PASR
=
“000”
(64 Mbit)
PASR
=
“001”
(32 Mbit)
PASR
=
“010”
(16 Mbit)
TCSR
=
“11”
(Ta
≤
+
85
°
C)
PASR
=
“000”
(64 Mbit)
PASR
=
“001”
(32 Mbit)
PASR
=
“010”
(16 Mbit)
Precharge Stand-
by
Current in Deep
Power Down
mode
-12
I
DD7
CKE
≤
0.2
V
All banks idle
Deep Power Down mode
0 V
≤
V
IN
≤
V
IL
Max
V
IH
Min
≤
V
IN
≤
V
DD
50
μ
A
-12L
10
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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